A many-electron tight binding method for the analysis of quantum dot systems
arXiv:1202.4931 · doi:10.1063/1.4759256
Abstract
We present a method which computes many-electron energies and eigenfunctions by a full configuration interaction which uses a basis of atomistic tight-binding wave functions. This approach captures electron correlation as well as atomistic effects, and is well suited to solid state quantum dot systems containing few electrons, where valley physics and disorder contribute significantly to device behavior. Results are reported for a two-electron silicon double quantum dot as an example.
9 pages, 6 figures
References in corpus (5)
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- Interface roughness, valley-orbit coupling and valley manipulation in quantum dots
- Magnetic field dependence of valley splitting in realistic Si/SiGe quantum wells
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