Physical mechanisms of interface-mediated intervalley coupling in Si

Abstract

The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt change in the conduction band minimum leads to intervalley scattering. We present a theoretical study of the interface-induced valley splitting in Si that provides simple criteria for optimal fabrication parameters to maximize this splitting. Our work emphasizes the relevance of different interface-related properties to the valley splitting.

4 pages, revised version

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Cited by in corpus (72)

• Silicon Quantum Electronics
• Semiconductor Spin Qubits
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• A fast "hybrid" silicon double quantum dot qubit
• Silicon quantum processor with robust long-distance qubit couplings
• Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
• Interface roughness, valley-orbit coupling and valley manipulation in quantum dots
• Valley-based noise-resistant quantum computation using Si quantum dots
• Spin-orbit coupling and operation of multi-valley spin qubits
• Spatially Resolving Valley Quantum Interference of a Donor in Silicon
• Three-electron spin qubits
• Exchange coupling in silicon quantum dots: Theoretical considerations for quantum computation
• Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si${}_x$Ge${}_{1-x}$ quantum dot
• Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides
• Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots
• Quantum dot spin qubits in Silicon: Multivalley physics
• Intervalley coupling for interface-bound electrons in silicon: An effective mass study
• SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits
• Resonant tunnelling features in the transport spectroscopy of quantum dots
• Genetic Design of Enhanced Valley Splitting towards a Spin Qubit in Silicon
• Orbital Stark effect and quantum confinement transition of donors in silicon
• Electron g-factor of valley states in realistic silicon quantum dots
• Spin filling of valley-orbit states in a silicon quantum dot
• Spin shuttling in a silicon double quantum dot
• Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot
• An electrically driven spin qubit based on valley mixing
• Hybrid spin and valley quantum computing with singlet-triplet qubits
• All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing
• Theory of Single Electron Spin Relaxation in Si/SiGe Lateral Coupled Quantum Dots
• Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
• Engineered valley-orbit splittings in quantum confined nanostructures in silicon
• Two-electron dephasing in single Si and GaAs quantum dots
• A quadrupolar exchange-only spin qubit
• Effective mass theory of monolayer δ-doping in the high-density limit
• Valley polarization assisted spin polarization in two dimensions
• Electromagnetic control of valley splitting in ideal and disordered Si quantum dots
• Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
• Singlet-triplet relaxation in multivalley silicon single quantum dots
• Bounds to electron spin qubit variability for scalable CMOS architectures
• Switching between relaxation hotspots and coldspots in disordered spin qubits
• A many-electron tight binding method for the analysis of quantum dot systems
• Extended interface states enhance valley splitting in Si/SiO2
• Theory of Spin Relaxation in Two-Electron Lateral Coupled Si/SiGe Quantum Dots
• Impact of valley phase and splitting on readout of silicon spin qubits
• Transporting a single-spin qubit through a double quantum dot
• Interface and electromagnetic effects in the valley splitting of Si quantum dots
• Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions
• Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling
• Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells
• SiGe/Si quantum dot electron spin decoherence dependence on ${}^{73}$Ge
• Valley Phase and Voltage Control of Coherent Manipulation in Si Quantum Dots
• Spin-Valley Qubit Dynamics In Exchange Coupled Silicon Quantum Dots
• Singlet-triplet relaxation in SiGe/Si/SiGe double quantum dots
• Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers
• Valley-Free Silicon Fins Caused by Shear Strain
• Valley splitting depending on the size and location of a silicon quantum dot
• Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface
• Splitting Valleys in Si/SiO${}_2$: Identification and Control of Interface States
• Flopping-mode electron dipole spin resonance in the strong-driving regime
• Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder
• Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures
• Optimisation of electrically-driven multi-donor quantum dot qubits
• Path integral simulation of exchange interactions in CMOS spin qubits
• Impurity-driven intervalley spin-flip scattering-induced 2D spin relaxation in silicon
• Valley splitting by extended zone effective mass approximation incorporating strain in silicon
• Prediction of the spin triplet two-electron quantum dots in Si: towards controlled quantum simulations of magnetic systems
• Scalable Parity Architecture With a Shuttling-Based Spin Qubit Processor
• Proposal for a cavity-induced measurement of the exchange coupling in quantum dots
• Impact of the valley orbit coupling on exchange gate for spin qubits in silicon quantum dots
• Exact Multi-Valley Envelope Function Theory of Valley Splitting in Si/SiGe Nanostructures
• Interplay of Pauli blockade with electron-photon coupling in quantum dots
• Wide Electrical Tunability of the Valley Splitting in a Doubly gated Silicon-on-Insulator Quantum Well