Silicon Quantum Electronics

Abstract

This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps include the isolation of single electrons, the observation of spin blockade and single-shot read-out of individual electron spins in both dopants and gated quantum dots in Si. Each of these results has come with physics that was not anticipated from previous work in other material systems. These advances underline the significant progress towards the realization of spin quantum bits in a material with a long spin coherence time, crucial for quantum computation and spintronics.

Accepted for publication in Reviews of Modern Physics. 64 pages, 62 figures

References in corpus (79)

• Quantum Computing
• Single-shot read-out of an individual electron spin in a quantum dot
• Driven coherent oscillations of a single electron spin in a quantum dot
• Coherent control of a single electron spin with electric fields
• A single-atom electron spin qubit in silicon
• Electronic measurement and control of spin transport in Silicon
• One-Dimensional Hole Gas in Germanium/Silicon Nanowire Heterostructures
• Circuit Quantum Electrodynamics with a Spin Qubit
• Solid state quantum memory using the 31P nuclear spin
• Metal-insulator transition in two-dimensional electron systems
• Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization
• Theory of electron spin decoherence by interacting nuclear spins in a quantum dot
• Coherent electronic transfer in quantum dot systems using adiabatic passage
• Transport spectroscopy of a single dopant in a gated silicon nanowire
• Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon
• Electron spin decoherence in isotope-enriched silicon
• Strong coupling of a spin qubit to a superconducting stripline cavity
• Valley Polarization in Si(100) at Zero Magnetic Field
• Electrical detection of 31P spin quantum states
• Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
• Coherent Control of Rydberg States in Silicon
• Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface: Theory
• Strong and Tunable Spin-Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires
• Physical mechanisms of interface-mediated intervalley coupling in Si
• Pair-wise decoherence in coupled spin qubit networks
• Monolithic growth of ultra-thin Ge nanowires on Si(001)
• Spin and valley-orbit splittings in SiGe/Si heterostructures
• Significant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon
• Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
• Magnetic field dependence of valley splitting in realistic Si/SiGe quantum wells
• Quantum control of donor electrons at the Si-SiO2 interface
• Efficient multiqubit entanglement via a spin-bus
• Stark Tuning of Donor Electron Spins in Silicon
• A simple and controlled single electron transistor based on doping modulation in silicon nanowires
• Single-electron quantum dot in Si/SiGe with integrated charge-sensing
• The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
• Nanoscale broadband transmission lines for spin qubit control
• Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface
• Electrical detection of spin echoes for phosphorus donors in silicon
• Decoherence induced by anisotropic hyperfine interaction in Si spin qubits
• Robust CNOT gates from almost any interaction
• Resonant tunnelling features in the transport spectroscopy of quantum dots
• Hubbard model description of silicon spin qubits: charge stability diagram and tunnel coupling in Si double quantum dots
• Electrostically defined few-electron double quantum dot in silicon
• Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
• Spin filling of valley-orbit states in a silicon quantum dot
• Single-atom doping for quantum device development in diamond and silicon
• External field control of donor electron exchange at the Si/SiO2 interface
• Stationary and transient leakage current in the Pauli spin blockade
• Coherent electron transport by adiabatic passage in an imperfect donor chain
• Singlet-Triplet Relaxation in Two-electron Silicon Quantum Dots
• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
• Engineered valley-orbit splittings in quantum confined nanostructures in silicon
• Fast tunnel rates in Si/SiGe one-electron single and double quantum dots
• Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot
• A gate-defined silicon quantum dot molecule
• Quantum non-demolition measurements of single donor spins in semiconductors
• Valley splitting of Si/SiGe heterostructures in tilted magnetic fields
• Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
• Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
• Singlet-triplet relaxation in multivalley silicon single quantum dots
• Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
• Non-ideality of quantum operations with the electron spin of a 31P donor in a Si crystal due to interaction with a nuclear spin system
• Conduction band tight-binding description for silicon applied to phosphorous donors
• Precision characterisation of two-qubit Hamiltonians via entanglement mapping
• Quantum control and manipulation of donor electrons in Si-based quantum computing
• Spin-dependent scattering in a silicon transistor
• A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure
• Spin Qubits in Multi-Electron Quantum Dots
• Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
• Error Rate of the Kane Quantum Computer CNOT Gate in the Presence of Dephasing
• Valley interference effects on a donor electron close to a Si/SiO2 interface
• Si/SiGe quantum dot with superconducting single-electron transistor charge sensor
• Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
• Cross-talk compensation of hyperfine control in donor qubit architectures
• Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots
• Silicon in the Quantum Limit: Quantum Computing and Decoherence in Silicon Architectures

Cited by in corpus (594)

• Cavity-based quantum networks with single atoms and optical photons
• A programmable two-qubit quantum processor in silicon
• Semiconductor Spin Qubits
• Storing quantum information for 30 seconds in a nanoelectronic device
• Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
• Building logical qubits in a superconducting quantum computing system
• Quantum CNOT Gate for Spins in Silicon
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Time-Domain Multiplexed 2-Dimensional Cluster State: Universal Quantum Computing Platform
• A 10-qubit solid-state spin register with quantum memory up to one minute
• A Coherent Spin-Photon Interface in Silicon
• Universal control of a six-qubit quantum processor in silicon
• A four-qubit germanium quantum processor
• The germanium quantum information route
• Qubits made by advanced semiconductor manufacturing
• Semiconductor Qubits In Practice
• Universal quantum logic in hot silicon qubits
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
• Universal Quantum Transducers based on Surface Acoustic Waves
• OpenQASM 3: A broader and deeper quantum assembly language
• Coherent spin-qubit photon coupling
• Coherent control of single electrons: a review of current progress
• Quantum decoherence dynamics of divacancy spins in silicon carbide
• A Chirality-Based Quantum Leap
• Resolving catastrophic error bursts from cosmic rays in large arrays of superconducting qubits
• Local and Distributed Quantum Computation
• Nonadiabatic Landau-Zener-Stückelberg-Majorana transitions, dynamics, and interference
• Optical addressing of an individual erbium ion in silicon
• Cryogenic MOS Transistor Model
• Two-axis control of a singlet-triplet qubit with an integrated micromagnet
• Rapid high-fidelity gate-based spin read-out in silicon
• Semiconductor Quantum Computation
• Quantum-Coherent Nanoscience
• Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers
• Silicon quantum processor with robust long-distance qubit couplings
• The 2021 Quantum Materials Roadmap
• Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch
• Gate fidelity and coherence of an electron spin in a Si/SiGe quantum dot with micromagnet
• Electrically controlling single spin qubits in a continuous microwave field
• Computational advantage of quantum random sampling
• Microwaves in Quantum Computing
• Quantum many-body theory for electron spin decoherence in nanoscale nuclear spin baths
• Quantum Dot Arrays in Silicon and Germanium
• Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
• Probing single electrons across 300 mm spin qubit wafers
• The role of lattice mismatch on the emergence of surface states in 2D hybrid perovskite quantum wells
• Low-frequency spin qubit detuning noise in highly purified ${}^{28}$Si/SiGe
• Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device
• Noisy intermediate-scale quantum computers
• Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
• Spin lifetime and charge noise in hot silicon quantum dot qubits
• The impact of classical control electronics on qubit fidelity
• Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
• Environmental noise spectroscopy with qubits subjected to dynamical decoupling
• High-fidelity quantum gates in Si/SiGe double quantum dots
• The isolated Heisenberg magnet as a quantum time crystal
• A dual-element, two-dimensional atom array with continuous-mode operation
• Probing quantum devices with radio-frequency reflectometry
• Input-output theory for spin-photon coupling in Si double quantum dots
• Photonics for Neuromorphic Computing: Fundamentals, Devices, and Opportunities
• Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
• Quantum spin transistor with a Heisenberg spin chain
• High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin
• Spin-orbit coupling and operation of multi-valley spin qubits
• Spiderweb array: A sparse spin-qubit array
• Fast coherent manipulation of three-electron states in a double quantum dot
• Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
• Spatially Resolving Valley Quantum Interference of a Donor in Silicon
• Coherent transfer of quantum information in silicon using resonant SWAP gates
• Three-electron spin qubits
• Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
• High fidelity resonant gating of a silicon based quantum dot hybrid qubit
• Donor spins in silicon for quantum technologies
• Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
• Heavy hole states in Germanium hut wires
• Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si${}_x$Ge${}_{1-x}$ quantum dot
• Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
• High Resolution Valley Spectroscopy of Si Quantum Dots
• Simulating Quantum Materials with Digital Quantum Computers
• Optimized cavity-mediated dispersive two-qubit gates between spin qubits
• Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot
• Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
• Auto-tuning of double dot devices in situ with machine learning
• Spin decoherence of magnetic atoms on surfaces
• Spin relaxation in a Si quantum dot due to spin-valley mixing
• Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO${}_2$
• Automated tuning of inter-dot tunnel couplings in quantum dot arrays
• Quantum probe hyperpolarisation of molecular nuclear spins
• Adequacy of Si:P Chains as Fermi-Hubbard Simulators
• Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
• Engineering interfacial quantum states and electronic landscapes by molecular nanoarchitectures
• Single electrons on solid neon as a solid-state qubit platform
• Single-shot readout and relaxation of singlet/triplet states in exchange-coupled ${}^{31}$P electron spins in silicon
• Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
• Optimal quantum networks and one-shot entropies
• Single-shot single-gate RF spin readout in silicon
• Genetic Design of Enhanced Valley Splitting towards a Spin Qubit in Silicon
• Site-selective quantum control in an isotopically enriched 28Si/SiGe quadruple quantum dot
• Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
• Realization of efficient quantum gates with a superconducting qubit-qutrit circuit
• Dispersive readout of valley splittings in cavity-coupled silicon quantum dots
• The Quantum Socket: Three-Dimensional Wiring for Extensible Quantum Computing
• Harnessing the Quantum Behavior of Spins on Surfaces
• Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits
• Computer-automated tuning of semiconductor double quantum dots into the single-electron regime
• Colloquium: Advances in automation of quantum dot devices control
• Charge Number Dependence of the Dephasing Rates of a Graphene Double Quantum Dot in a Circuit QED Architecture
• Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability
• Electron g-factor of valley states in realistic silicon quantum dots
• Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots
• Topological phases of a dimerized Fermi-Hubbard model for semiconductor nano-lattices
• Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot
• Valley splitting of single-electron Si MOS quantum dots
• Electric-field control and noise protection of the flopping-mode spin qubit
• Shuttling an electron spin through a silicon quantum dot array
• Spin Relaxation due to Charge Noise
• Disorder-induced valley-orbit hybrid states in Si quantum dots
• Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
• Low charge noise quantum dots with industrial CMOS manufacturing
• Entangling distant resonant exchange qubits via circuit quantum electrodynamics
• Single-shot readout of hole spins in Ge
• Coherent long-distance spin-qubit-transmon coupling
• Algorithmic simulation of far-from-equilibrium dynamics using quantum computer
• Optimizing quantum gates towards the scale of logical qubits
• Crosstalk analysis for single-qubit and two-qubit gates in spin qubit arrays
• Adiabatic many-body state preparation and information transfer in quantum dot arrays
• Theory of one and two donors in Silicon
• Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot
• Strong electron-electron interactions in Si/SiGe quantum dots
• Tunable Spin Qubit Coupling Mediated by a Multi-Electron Quantum Dot
• The SMART protocol -- Pulse engineering of a global field for robust and universal quantum computation
• In-situ Tuning of the Electric Dipole Strength of a Double Dot Charge Qubit: Charge Noise Protection and Ultra Strong Coupling
• Hyperfine Stark effect of shallow donors in silicon
• Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation
• Navigating the 16-dimensional Hilbert space of a high-spin donor qudit with electric and magnetic fields
• State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot
• Programmable Quantum Annealing Architectures with Ising Quantum Wires
• Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots
• Impurity-assisted electric control of spin-valley qubits in monolayer MoS${}_2$
• Annealing shallow Si/SiO${}_2$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors
• Phonon-Mediated Decay of Singlet-Triplet Qubits in Double Quantum Dots
• An electrically driven spin qubit based on valley mixing
• Large dispersive interaction between a CMOS double quantum dot and microwave photons
• Coupling of three-spin qubits to their electric environment
• Anisotropic Pauli spin blockade in hole quantum dots
• The formation of nonequilibrium steady states in interacting double quantum dots: When coherences dominate the charge distribution
• Time-dependent quantum transport: causal superfermions, exact fermion-parity protected decay mode, and Pauli exclusion principle for mixed quantum states
• Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
• Semiconductor materials stacks for quantum dot spin qubits
• Two-qubit logic with anisotropic exchange in a fin field-effect transistor
• Efficient orthogonal control of tunnel couplings in a quantum dot array
• Randomized benchmarking of barrier versus tilt control of a singlet-triplet qubit
• Coherent Control of the Fine-Structure Qubit in a Single Alkaline-Earth Atom
• Hybrid spin and valley quantum computing with singlet-triplet qubits
• A two-dimensional array of single-hole quantum dots
• Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor
• Variability of electron and hole spin qubits due to interface roughness and charge traps
• Control of valley dynamics in silicon quantum dots in the presence of an interface step
• All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing
• Non-Abelian Braiding of Chiral Majorana Fermions by Quantum Dots
• Room temperature manipulation of long lifetime spins in metallic-like carbon nanospheres
• Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
• Two-Qubit Couplings of Singlet-Triplet Qubits Mediated by One Quantum State
• SiGe quantum dots for fast hole spin Rabi oscillations
• Spatial noise correlations beyond nearest-neighbor in ${}^{28}$Si/SiGe spin qubits
• An Exchange-Coupled Donor Molecule in Silicon
• Network architecture for a topological quantum computer in silicon
• The asymmetric resonant exchange qubit under the influence of electrical noise
• Protocol for a resonantly-driven three-qubit Toffoli gate with silicon spin qubits
• Real-time observation of Cooper pair splitting showing strong non-local correlations
• Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
• Low disorder and high valley splitting in silicon
• Spin-lattice relaxation times of single donors and donor clusters in silicon
• Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs
• Quantum Computing with Acceptor Spins in Silicon
• Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems
• The critical role of substrate disorder in valley splitting in Si quantum wells
• Controllable freezing of the nuclear spin bath in a single-atom spin qubit
• Nonlinear response and crosstalk of electrically driven silicon spin qubits
• The Reservoir Learning Power across Quantum Many-Boby Localization Transition
• Superconducting quantum point contact with split gates in the two dimensional LaAlO3/SrTiO3 superfluid
• A quadrupolar exchange-only spin qubit
• Coulomb-mediated antibunching of an electron pair surfing on sound
• Quantum walks of interacting fermions on a cycle graph
• Extended Hubbard model for mesoscopic transport in donor arrays in silicon
• Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
• Strong coupling between a microwave photon and a singlet-triplet qubit
• Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
• Is all-electrical silicon quantum computing feasible in the long term?
• Radio frequency reflectometry in silicon-based quantum dots
• Long-distance entangling gates between quantum dot spins mediated by a superconducting resonator
• Spin-orbit dynamics of single acceptor atoms in silicon
• Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences
• Algorithm for automated tuning of a quantum dot into the single-electron regime
• Dressed photon-orbital states in a quantum dot: Inter-valley spin resonance
• Bottom-up fabrication of atomically precise graphene nanoribbons
• Distributed quantum error correction for chip-level catastrophic errors
• Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon
• General framework for transport in spin-orbit-coupled superconducting heterostructures: Nonuniform spin-orbit coupling and spin-orbit-active interfaces
• Electromagnetic control of valley splitting in ideal and disordered Si quantum dots
• A silicon-based single-electron interferometer coupled to a fermionic sea
• Probing resonating valence bonds on a programmable germanium quantum simulator
• Electrical control of uniformity in quantum dot devices
• Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate
• Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe${}_2$
• Coherent spin-valley oscillations in silicon
• Cornertronics in Two-Dimensional Second-Order Topological Insulators
• Fast high-fidelity entangling gates for spin qubits in Si double quantum dots
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
• Echo trains in pulsed electron spin resonance of a strongly coupled spin ensemble
• Ambipolar quantum dots in undoped silicon fin field-effect transistors
• Interplay of charge noise and coupling to phonons in adiabatic electron transfer between quantum dots
• Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit
• Long distance coupling of resonant exchange qubits
• Single-shot readout of a driven hybrid qubit in a GaAs double quantum dot
• Quantum interferometry with a g-factor-tunable spin qubit
• Charge State Hysteresis in Semiconductor Quantum Dots
• Hybrid superconductor-semiconductor systems for quantum technology
• Correlated spectrum of distant semiconductor qubits coupled by microwave photons
• Ray-based framework for state identification in quantum dot devices
• Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
• Single-electron Transport in Graphene-like Nanostructures
• Deep Learning-Guided Surface Characterization for Autonomous Hydrogen Lithography
• The exchange-only singlet-only spin qubit
• Ultrafast optical nanoscopy of carrier dynamics in silicon nanowires
• Adiabatic electron charge transfer between two quantum dots in presence of 1/f noise
• Palladium gates for reproducible quantum dots in silicon
• Two-body Wigner molecularization in asymmetric quantum dot spin qubits
• Thermoelectric response of a correlated impurity in the nonequilibrium Kondo regime
• Decoherence of a Driven Qubit
• A singlet-triplet hole-spin qubit in MOS silicon
• Analytically parameterized solutions for robust quantum control using smooth pulses
• Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers
• Deep reinforcement learning for universal quantum state preparation via dynamic pulse control
• Electric-field tuning of the valley splitting in silicon corner dots
• Anisotropic hyperfine interaction of surface-adsorbed single atoms
• Radio frequency reflectometry and charge sensing of a precision placed donor in silicon
• Braiding and fusion of non-Abelian vortex anyons
• Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot
• Parallel detection and spatial mapping of large nuclear spin clusters
• Highly tuneable hole quantum dots in Ge-Si core-shell nanowires
• Magnetic Gradient Fluctuations from Quadrupolar ${}^{73}$Ge in Si/SiGe Exchange-Only Qubits
• Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits
• Do micromagnets expose spin qubits to charge and Johnson noise?
• Atomic-level Characterisation of Quantum Computer Arrays by Machine Learning
• Measurements of capacitive coupling within a quadruple quantum dot array
• Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
• Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field
• Linear scaling approach for atomistic calculation of excitonic properties of 10-million-atom nanostructures
• Valley two-qubit system in a MoS${}_2$-monolayer gated double quantum dot
• Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon
• Two-Qubit Pulse Gate for the Three-Electron Double Quantum Dot Qubit
• Spin-Degenerate Regimes for Single Quantum Dots in Transition Metal Dichalcogenide Monolayers
• Quantum process tomography of a controlled-phase gate for time-bin qubits
• Acoustic Traps and Lattices for Electrons in Semiconductors
• Passivation and characterization of charge defects in ambipolar silicon quantum dots
• Noise-compensating pulses for electrostatically controlled silicon spin qubits
• A fabrication guide for planar silicon quantum dot heterostructures
• Switching between relaxation hotspots and coldspots in disordered spin qubits
• CMOS on-chip thermometry at deep cryogenic temperatures
• Single rare-earth ions as atomic-scale probes in ultra-scaled transistors
• Enhanced Valley Splitting in Si Layers with Oscillatory Ge Concentration
• Ambipolar quantum dots in intrinsic silicon
• A linear triple quantum dot system in isolated configuration
• Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
• Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies
• Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device
• Single-charge detection by an atomic precision tunnel junction
• Environmental noise effects on entanglement fidelity of exchange-coupled semiconductor spin qubits
• Spin decoherence in a two-qubit CPHASE gate: the critical role of tunneling noise
• Universal quantum computing using electro-nuclear wavefunctions of rare-earth ions
• Quantum dots with split enhancement gate tunnel barrier control
• Optimizing surface defects for atomic-scale electronics: Si dangling bonds
• Transporting a single-spin qubit through a double quantum dot
• Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures
• Impact of valley phase and splitting on readout of silicon spin qubits
• Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit
• Intrinsic decoherence in isolated quantum systems
• Fault-Tolerant Quantum Computation for Singlet-Triplet Qubits with Leakage Errors
• Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor
• Dynamics of entanglement of two electron spins interacting with nuclear spin baths in quantum dots
• A Quantum von Neumann Architecture for Large-Scale Quantum Computing
• Roadmap on Atomic-scale Semiconductor Devices
• Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon
• Charge fluctuations in nonlinear heat transport
• Capacitively coupled singlet-triplet qubits in the double charge resonant regime
• Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
• Charge pumping under spin resonance in Si(100) metal-oxide-semiconductor transistors
• Interface and electromagnetic effects in the valley splitting of Si quantum dots
• Shallow unitary decompositions of quantum Fredkin and Toffoli gates for connectivity-aware equivalent circuit averaging
• CMOS Quantum Computing: Toward A Quantum Computer System-on-Chip
• Tunneling statistics for analysis of spin-readout fidelity
• Negative exchange interactions in coupled few-electron quantum dots
• Long-Range Interaction between Charge and Spin Qubits in Quantum Dots
• Reconfigurable quadruple quantum dots in a silicon nanowire transistor
• Parallel entangling gate operations and two-way quantum communication in spin chains
• Molecular formations and spectra due to electron correlations in three-electron hybrid double-well qubits
• High-Fidelity Entangling Gates for Quantum-Dot Hybrid Qubits Based on Exchange Interactions
• Optimized micromagnet geometries for Majorana zero modes in low g-factor materials
• Characterizing temperature and strain variations with qubit ensembles for their robust coherence protection
• An automated approach for consecutive tuning of quantum dot arrays
• Spin dynamics in quantum dots on liquid helium
• Spatially resolved resonant tunneling on single atoms in silicon
• Donor Wavefunctions in Si Gauged by STM Images
• Entanglement generation using a controlled-phase gate for time-bin qubits
• Highly tunable exchange-only singlet-only qubit in a GaAs triple quantum dot
• High Fidelity Singlet-Triplet $S$-$T_{-}$ Qubits in Inhomogeneous Magnetic Fields
• Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry
• Cryogen-free scanning gate microscope for the characterization of Si/Si${}_{0.7}$Ge${}_{0.3}$ quantum devices at milli-Kelvin temperatures
• Crosstalk analysis for simultaneously driven two-qubit gates in spin qubit arrays
• Disorder-dressed quantum evolution
• Classification and magic magnetic-field directions for spin-orbit-coupled double quantum dots
• High-Fidelity Spin Measurement on the Nitrogen-Vacancy Center
• Programmable two-qubit gates in capacitively coupled flopping-mode spin qubits
• Wafer-scale fabrication and room-temperature experiments on graphene-based gates for quantum computation
• Wigner molecules and hybrid qubits
• High fidelity ac gate operations of the quantum dot hybrid qubit
• Protecting solid-state spins from strongly coupled environment
• Quantum Wigner molecules in moiré materials
• SpinQ: Compilation strategies for scalable spin-qubit architectures
• Nuclear spin readout in a cavity-coupled hybrid quantum dot-donor system
• Isotopic enrichment of silicon by high fluence ${}^{28}$Si${}^{-}$ ion implantation
• Valley Phase and Voltage Control of Coherent Manipulation in Si Quantum Dots
• Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots
• Predictive coupled-cluster isomer orderings for some Si${}_n$C${}_m$ ($m,n\le 12$) clusters; A pragmatic comparison between DFT and complete basis limit coupled-cluster benchmarks
• Spin-orbit enhancement in Si/SiGe heterostructures with oscillating Ge concentration
• Cavity-mediated entanglement of parametrically driven spin qubits via sidebands
• Microwave-frequency scanning gate microscopy of a Si/SiGe double quantum dot
• A high-sensitivity charge sensor for silicon qubits above one kelvin
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Scalable on-chip multiplexing of silicon single and double quantum dots
• Influence of interface potential on the effective mass in Ge nanostructures
• Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture
• Coherent spin transport through helical edge states of topological insulator
• Transport through an impurity tunnel coupled to a Si/SiGe quantum dot
• High-precision real-space simulation of electrostatically-confined few-electron states
• Superconducting MoSi nanowires
• Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
• Valley blockade and multielectron spin-valley Kondo effect in silicon
• Entanglement entropy scaling in solid-state spin arrays via capacitance measurements
• Optimized Coplanar Waveguide Resonators for a Superconductor-Atom Interface
• Interplay of exchange and superexchange in triple quantum dots
• Electric dipole spin resonance in systems with a valley dependent g-factor
• Modelling of spin decoherence in a Si hole qubit perturbed by a single charge fluctuator
• Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
• A sparse spin qubit array with integrated control electronics
• Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers
• Gigahertz Single-Electron Pumping Mediated by Parasitic States
• Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon
• Inverted Singlet-Triplet Qubit Coded on a Two-Electron Double Quantum Dot
• Keeping a spin qubit alive in natural silicon: Comparing optimal working points and dynamical decoupling
• Indications of a soft cutoff frequency in the charge noise of a Si/SiGe quantum dot spin qubit
• Coulomb interaction and valley-orbit coupling in Si quantum dots
• Decoherence induced by a sparse bath of two-level fluctuators: peculiar features of $1/f$ noise in high-quality qubits
• Genuine multipartite entanglement in a one-dimensional Bose-Hubbard model with frustrated hopping
• Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
• Measurement of tunnel coupling in a Si double quantum dot based on charge sensing
• Optical orientation of electron spins and valence band spectroscopy in germanium
• A low-disorder Metal-Oxide-Silicon double quantum dot
• Valley splitting in silicon from the interference pattern of quantum oscillations
• Theory of box-model hyperfine couplings and transport signatures of long-range nuclear-spin coherence in a quantum-dot spin valve
• Neural network based deep learning analysis of semiconductor quantum dot qubits for automated control
• Anisotropic $g$-tensors in hole quantum dots: The role of the transverse confinement direction
• Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells
• Valley-Free Silicon Fins Caused by Shear Strain
• A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics
• Induced quantum dot probe for material characterization
• Equilibration in closed quantum systems: Application to spin qubits
• Ionic Charge Distributions in Silicon Atomic Wires
• Valley splitting depending on the size and location of a silicon quantum dot
• Magnetic degeneracy points in interacting two-spin systems: geometrical patterns, topological charge distributions, and their stability
• Statistical exchange-coupling errors and the practicality of scalable silicon donor qubits
• Interface effects on acceptor qubits in silicon and germanium
• Single-charge occupation in ambipolar quantum dots
• Theory of single and two-qubit operations with donor-bound electron spins in germanium
• Control of the ionization state of 3 single donor atoms in silicon
• Wigner-molecule supercrystal in transition-metal dichalcogenide moiré superlattices: Lessons from the bottom-up approach
• Simple operation sequences to couple and interchange quantum information between spin qubits of different kinds
• Valleytronic full configuration-interaction approach: An application to the excitation spectra of Si double-dot qubits
• Theory of valley-resolved spectroscopy of a Si triple quantum dot coupled to a microwave resonator
• Dynamics of two coupled semiconductor spin qubits in a noisy environment
• Two-qubit CZ gates robust against charge noise in silicon while compensating for crosstalk using neural network
• Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas
• Dynamics of the Anderson impurity model: benchmarking a non-adiabatic exchange-correlation potential in time-dependent density functional theory
• Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
• Coupled vertical double quantum dots at single-hole occupancy
• Host isotope mass effects on the hyperfine interaction of group-V donors in silicon
• Dynamical mean-field approach to disordered interacting systems and applications to quantum transport problem
• Nitrogen in Silicon for Room Temperature Single Electron Tunneling Devices
• Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane
• Decoherence of two coupled singlet-triplet spin qubits
• Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes
• Hole weak anti-localization in a strained-Ge surface quantum well
• Probing the Jaynes-Cummings Ladder with Spin Circuit Quantum Electrodynamics
• Spin-Orbit Qubit on a Multiferroic Insulator in a Superconducting Resonator
• Designing globally optimal entangling gates using geometric space curves
• Calculation of tunnel-couplings in open gate-defined disordered quantum dot systems
• Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
• Optical Control of Donor Spin Qubits in Silicon
• Democratizing Spin Qubits
• Level anticrossing effect in single-level or multilevel double quantum dots: Electrical conductance, zero-frequency charge susceptibility and Seebeck coefficient
• Quadrupolar interactions between acceptor pairs in p-doped semiconductors
• Exchange interaction between two quantum dots coupled through a superconducting island
• Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories
• Fast high-fidelity single-qubit gates for flip-flop qubits in silicon
• Enhanced quantum state preparation via stochastic prediction of neural network
• Possible hundredfold enhancement in the direct magnetic coupling of a single atomic spin to a circuit resonator
• Line Shapes of Electric Dipole Spin Resonance in Pauli Spin Blockade
• Interaction between interface and massive states in multivalley topological heterostructures
• Direct measurement of electron intervalley relaxation in a Si/SiGe quantum dot
• ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon
• Self assembled Wigner crystals as mediators of spin currents and quantum information
• Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder
• Scanned single-electron probe inside a silicon electronic device
• Theoretical Prediction of Enhanced Thermopower in n-doped Si/Ge Superlattices using Effective Mass Approximation
• Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator
• A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures
• Passive and active suppression of transduced noise in silicon spin qubits
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• Anisotropy with respect to the applied magnetic field of spin qubit decoherence times
• Designing high-fidelity multi-qubit gates for semiconductor quantum dots through deep reinforcement learning
• Engineering local strain for single-atom nuclear acoustic resonance in silicon
• The importance of second order deformation potentials in modeling of InAs/GaAs nanostructures
• Hyperfine-assisted fast electric control of dopant nuclear spins in semiconductors
• Designing arbitrary single-axis rotations robust against perpendicular time-dependent noise
• Near-Term Spin-Qubit Architecture Design via Multipartite Maximally-Entangled States
• Quantum Simulation and Optimization in Hot Quantum Networks
• Protected Solid-State Qubits
• Pairwise quantum correlations in four-level quantum dot systems
• Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy
• Nuclear spin decoherence of neutral ${}^{31}$P donors in silicon: Effect of environmental ${}^{29}$Si nuclei
• Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots
• Acceptor-based qubit in silicon with tunable strain
• Theory of multi-dimensional quantum capacitance and its application to spin and charge discrimination in quantum-dot arrays
• Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit
• Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations
• Theory of Silicon Spin Qubit Relaxation in a Synthetic Spin-Orbit Field
• Universal quantum computation with symmetric qubit clusters coupled to an environment
• beSnake: A routing algorithm for scalable spin-qubit architectures
• Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering
• Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices
• Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon
• Tunable p-n junction barriers in few-electron bilayer graphene quantum dots
• Phonon-induced decoherence of a charge quadrupole qubit
• High-fidelity CNOT gate for spin qubits with asymmetric driving using virtual gates
• Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip
• Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
• Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
• π-Conjugation in Epitaxial Si(111)-($\sqrt{3}$$\times$$\sqrt{3}$) Surface: an Unconventional "Bamboo Hat" Bonding Geometry for Si
• Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures
• Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
• Fabrication of quantum dots in undoped Si/Si${}_{0.8}$Ge${}_{0.2}$ heterostructures using a single metal-gate layer
• Coherent transfer of singlet-triplet qubit states in an architecture of triple quantum dots
• Time independent quantum circuits with local interactions
• Electric control of tunneling energy in graphene double dots
• Fast noise-resistant control of donor nuclear spin qubits in silicon
• Path integral simulation of exchange interactions in CMOS spin qubits
• Optimisation of electrically-driven multi-donor quantum dot qubits
• A compact and versatile cryogenic probe station for quantum device testing
• Pauli spin blockade with site-dependent g-tensors and spin-polarized leads
• Electron qubits surfing on acoustic waves: review of recent progress
• The origins of noise in the Zeeman splitting of spin qubits in natural-silicon devices
• Electronic transport in Si:P delta-doped wires
• Magnetic field induced charge redistribution in disordered graphene double quantum dots
• Hybrid Exchange Measurement-Based Qubit Operations in Semiconductor Double Quantum Dot Qubits
• The superconducting circuit companion -- an introduction with worked examples
• Non-destructive X-ray imaging of patterned delta-layer devices in silicon
• Spin-orbit coupling induced two-electron relaxation in silicon donor pairs
• Compressed Optimization of Device Architectures (CODA) for semiconductor quantum devices
• Heitler-London model for acceptor-acceptor interactions in doped semiconductors
• Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography
• Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues
• Hydrogenic Spin-Valley states of the Bromine donor in 2H-MoTe${}_2$
• Anisotropy of spin coherence in high mobility quantum wells with arbitrary magnetic fields
• Leveraging Off-the-Shelf Silicon Chips for Quantum Computing
• Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
• Long range entanglement in quantum dot systems under the Fermi-Hubbard approach
• Electronic Wigner-Molecule Polymeric Chains in Elongated Silicon Quantum Dots and Finite-Length Quantum Wires
• Valley splitting by extended zone effective mass approximation incorporating strain in silicon
• Dissipation and gate timing errors in SWAP operations of qubits
• Measurements and atomistic theory of electron $g$ factor anisotropy for phosphorus donors in strained silicon
• Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems
• High-Fidelity Entangling Gates for Electron and Nuclear Spin Qubits in Diamond
• Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
• Highly tunable 2D silicon quantum dot array with coupling beyond nearest neighbors
• Coherent coupling between a quantum dot and a donor in silicon
• Quantum estimation and remote charge sensing with a hole-spin qubit in silicon
• Impurity-driven intervalley spin-flip scattering-induced 2D spin relaxation in silicon
• Nanoscale addressing and manipulation of neutral atoms using electromagnetically induced transparency
• Spin relaxation of a donor electron coupled to interface states
• Equivalent Resistance from the Quantum to the Classical Transport Limit
• Annual-modulation fingerprint of the axion wind induced sideband triplet in quantum dot spin qubit sensors
• Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
• The Role of Quantum Computing in Advancing Scientific High-Performance Computing: A perspective from the ADAC Institute
• 2-dimensional semiconductors pave the way towards dopant based quantum computing
• The formation of a nuclear-spin dark state in silicon
• Prediction of the spin triplet two-electron quantum dots in Si: towards controlled quantum simulations of magnetic systems
• Entangled Photon-Pair Emission in Waveguide Circuit QED from a Cooper Pair Splitter
• Preparation and Readout of Multielectron High-Spin States in a Gate-Defined GaAs/AlGaAs Quantum Dot
• Experimental online quantum dots charge autotuning using neural networks
• Shape and coarsening dynamics of strained islands
• Integrated information storage and transfer with a coherent magnetic device
• Automatic Detection of Nuclear Spins at Arbitrary Magnetic Fields via Signal-to-Image AI Model
• Hyperfine-assisted decoherence of a phosphorus nuclear-spin qubit in silicon
• Natural and bionic neuronal membranes: possible sites for quantum biology
• Two-qubit logical operations in three quantum dots system
• Leakage and dephasing in ${}^{28}$Si-based exchange-only spin qubits
• Physical approach to quantum networks with massive particles
• Low Temperature Relaxation of Donor Bound Electron Spins in ${}^{28}$Si:P
• Few-electrode design for silicon MOS quantum dots
• Error Mitigation in Quantum Computers subject to Spatially Correlated Noise
• Probing the Atomic Arrangement of Sub-Surface Dopants in a Silicon Quantum Device Platform
• Characterization of Tunnel Diode Oscillator for Qubit Readout Applications
• A Computational Workflow for Designing Silicon Donor Qubits
• Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling
• Excited states of a phosphorus pair in silicon: Effects of valley-orbital interaction and electron-electron interactions
• Minimal evolution times for fast, pulse-based state preparation in silicon spin qubits
• Machine Learning Force Field for Thermal Oxidation of Silicon
• Two-qubit sweet spots for capacitively coupled exchange-only spin qubits
• Observation of the symmetry of core states of a single Fe impurity in GaAs
• Envelope-function theory of inhomogeneous strain in semiconductor nanostructures
• Towards hole-spin qubits in Si pMOSFETs within a planar CMOS foundry technology
• Efficient adaptive Bayesian estimation of a slowly fluctuating Overhauser field gradient
• Fight or Flight: Cosmic Ray-Induced Phonons and the Quantum Surface Code
• Bardeen's tunneling theory applied to intraorbital and interorbital hopping integrals between dopants in silicon
• Signatures of Valley Kondo Effect in Si/SiGe Quantum Dots
• Topological charge and spin pumping in a semiconductor nanowire
• Analytic approach to the Landau-Zener problem in bounded parameter space
• Electric and Magnetic Field Nano-Sensing Using a New, Atomic-like Qubit in a Carbon Nanotube
• Fast spin-valley-based quantum gates in Si with micromagnets
• Gate control, g-factors and spin orbit energy of p-type GaSb nanowire quantum dot devices
• Electrical Interconnects for Silicon Spin Qubits
• Direct measurement of 2DEG states in shallow Si:Sb $\delta$-layers
• Hole spin splitting in a Ge quantum dot with finite barriers
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• Spin Hot Spots in Single-Electron GaAs-based Quantum Dots
• Correcting on-chip distortion of control pulses with silicon spin qubits
• Assessing quantum dot SWAP gate fidelity using tensor network methods
• Operation of a quantum dot in the finite-state machine mode: single-electron dynamic memory
• Effect of device design on charge offset drift in Si/SiO${}_2$ single electron devices
• Imaging asymmetric Coulomb blockade phenomena across metallic nanoislands
• Modeling dynamics of entangled physical systems with superconducting quantum computer
• Purcell-enhanced lifetime modulation of quantum emitters as a probe of local refractive index changes
• Isotope engineering of silicon and diamond for quantum computing and sensing applications
• Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
• Quantum gates in coupled quantum dots controlled by coupling modulation
• The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
• Micromagnet-free operation of electron spin qubits in Si/Si${}_{1-x}$Ge${}_x$ vertical double quantum dots
• Disordered Si:P nanostructures as switches and wires for nanodevices
• Control of threshold voltages in Si/SiGe quantum devices via optical illumination
• Quantum Error Correction Assisted Axion Search in CMOS Spin Qubit Arrays
• Impact of the valley orbit coupling on exchange gate for spin qubits in silicon quantum dots
• Quantum Algorithms, Architecture, and Error Correction
• State Initialization of a Hot Spin Qubit in a Double Quantum Dot by Measurement-Based Quantum Feedback Control
• Bootstrapping, autonomous testing, and initialization system for Si/Si${}_x$Ge${}_{1-x}$ multi-quantum-dot devices
• Quantum correlation generation capability of experimental processes
• Donors in Ge as Qubits: Establishing Physical Attributes
• Does Cosmological Evolution Select for Technology?
• Efficient unitary method for simulation of driven quantum dot systems
• Transport-induced suppression of nuclear field fluctuations in multi-quantum-dot systems
• Compilation Techniques for Spin Qubits in a Shuttling Bus Architecture
• Spin-Noise and Damping in Individual Metallic Ferromagnetic Nanoparticles
• Total energy calculation for the metallic hcp phase of Zn in the bulk, layered, and quantum dot limits
• Interaction without back-action in the context of quantum manipulation
• Exact Multi-Valley Envelope Function Theory of Valley Splitting in Si/SiGe Nanostructures
• Development of nanowire devices with quantum functionalities
• Role of Noise in Nanostructure Formation: A Theoretical Investigation of Quantum Dots and Quantum Dot Molecules
• Four-state discrimination for a pair of spin qubits via gate reflectometry
• Suppression of coherent errors during entangling operations in NV centers in diamond
• Effects of valley splitting on resonant-tunneling readout of spin qubits
• Magnetic control of electron scattering in silicene quantum dots
• Interplay of Pauli blockade with electron-photon coupling in quantum dots
• High-temperature operation of a silicon qubit
• Controlled-Not Quantum Logic Gate in Two Strongly Coupled Semiconductor Charge Qubits
• Toward quantum interconnects featuring nanometer-to-picometer bandwidth compression and THz-range quantum frequency conversion
• A Temperature Change can Solve the Deutsch-Jozsa Problem : An Exploration of Thermodynamic Query Complexity
• Comparison of spin-qubit architectures for quantum error-correcting codes
• Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers
• Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures
• Robust iSWAP gates for semiconductor spin qubits with local driving
• Switchable spin-photon coupling with hole spins in single-quantum dots
• Inter- and intra-band Coulomb interactions between holes in silicon nanostructures
• Artificial versus Natural Atoms: The uncanny capability of the many-body Schrödinger equation to produce emergent behavior
• Strained Donor-Bound Excitons in ${}^{28}$Si
• Electrically driven spin resonance with bichromatic driving
• Landau-Zener Transitions in Spin Qubit Encoded in Three Quantum Dots
• Non-adiabatic quantum control of valley states in silicon
• Two-and three-qubit room-temperature graphene quantum gates
• Silicon Donor Array as a Disordered One-Dimensional Electron Gas
• Negative exchange interaction in Si quantum dot arrays via valley-phase induced ${\mathbb{Z}}_2$ gauge field
• Efficient electron transfer in quantum dot chains controlled by a cubic detuning profile via shortcuts to adiabaticity
• Digital-Controlled Method of Conveyor-Belt Spin Shuttling in Silicon for Large-Scale Quantum Computation