Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation

Abstract

We analyze a prototypical particle-in-a-box model for a hole spin qubit. This quantum dot is subjected to static magnetic and electric fields, and to a radio-frequency electric field that drives Rabi oscillations owing to spin-orbit coupling. We derive the equations for the Rabi frequency in a regime where the Rabi oscillations mostly result from the coupling between the qubit states and a single nearby excited state. This regime has been shown to prevail in, e.g., hole spin qubits in thin silicon-on-insulator nanowires. The equations for the Rabi frequency highlight the parameters that control the Rabi oscillations. We show, in particular, that [110]-oriented dots on (001) substrates perform much better than [001]-oriented dots because they take best advantage of the anisotropy of the valence band of the host material. We also conclude that silicon provides the best opportunities for fast Rabi oscillations in this regime despite small spin-orbit coupling.

14 pages, 8 figures

References in corpus (28)

• Quantum Computation with Quantum Dots
• Spins in few-electron quantum dots
• Driven coherent oscillations of a single electron spin in a quantum dot
• Silicon Quantum Electronics
• Coherent control of a single electron spin with electric fields
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A Two Qubit Logic Gate in Silicon
• A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
• A single-atom electron spin qubit in silicon
• A programmable two-qubit quantum processor in silicon
• Electron spin coherence exceeding seconds in high purity silicon
• Spin-orbit qubit in a semiconductor nanowire
• A CMOS silicon spin qubit
• Electric Dipole Induced Spin Resonance in Quantum Dots
• Orbital mechanisms of electron spin manipulation by an electric field
• Ge hole spin qubit
• A fault-tolerant addressable spin qubit in a natural silicon quantum dot
• Strong Spin-Orbit Interaction and Helical Hole States in Ge/Si Nanowires
• Fast spin-orbit qubit in an indium antimonide nanowire
• Spin-Orbit Mediated Control of Spin Qubits
• Electrical spin driving by $g$-matrix modulation in spin-orbit qubits
• Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
• Circuit QED with Hole-Spin Qubits in Ge/Si Nanowire Quantum Dots
• Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
• Theory of electric dipole spin resonance in quantum dots: Mean field theory with Gaussian fluctuations and beyond
• Heavy hole states in Germanium hut wires
• Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
• Control of electron spin and orbital resonance in quantum dots through spin-orbit interactions

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• Two-band description of the strong `spin'-orbit coupled one-dimensional hole gas in a cylindrical Ge nanowire
• Electrical manipulation of a hole `spin'-orbit qubit in nanowire quantum dot: the nontrivial magnetic field effects
• Towards hole-spin qubits in Si pMOSFETs within a planar CMOS foundry technology
• Envelope-function theory of inhomogeneous strain in semiconductor nanostructures
• Cancelling second order frequency shifts in Ge hole spin qubits via bichromatic control
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
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• Giant Rabi frequencies between qubit and excited hole states in silicon quantum dots
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