An addressable quantum dot qubit with fault-tolerant control fidelity

Abstract

Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford based randomized benchmarking and consistent with that required for fault-tolerant quantum computing. This qubit has orders of magnitude improved coherence times compared with other quantum dot qubits, with T_2* = 120 mus and T_2 = 28 ms. By gate-voltage tuning of the electron g*-factor, we can Stark shift the electron spin resonance (ESR) frequency by more than 3000 times the 2.4 kHz ESR linewidth, providing a direct path to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies.

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• Depletion-mode Quantum Dots in Intrinsic Silicon
• Theory of charge stability diagrams in coupled quantum dot qubits
• Nonmonotonic buildup of spin-singlet correlations in a double quantum dot
• Readout using Resonant Tunneling in Silicon Spin Qubits
• Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
• Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications
• Quantum non-demolition measurement of an electron spin qubit through its low-energy many-body spin environment
• Robust entangling gate for capacitively coupled few-electron singlet-triplet qubits
• Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators
• Experimental online quantum dots charge autotuning using neural networks
• Charge susceptibility and conductances of a double quantum dot
• Decoherence and Quantum Error Correction for Quantum Computing and Communications
• Bench tests for microscopic theory of Raman scattering in powders of disordered nonpolar crystals: nanodiamonds and Si nanoparticles
• Leakage and dephasing in ${}^{28}$Si-based exchange-only spin qubits
• Annual-modulation fingerprint of the axion wind induced sideband triplet in quantum dot spin qubit sensors
• Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
• Quantum Computation by Spin Parity Measurements with Encoded Spin Qubits
• Entangled Photon-Pair Emission in Waveguide Circuit QED from a Cooper Pair Splitter
• A Theory of Direct Randomized Benchmarking
• Robust quantum dots charge autotuning using neural network uncertainty
• Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots
• Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot
• Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs
• Spin manipulation and spin dephasing in quantum dot integrated with a slanting magnetic field
• Electron Charge Sensor with Hole Current Operating at Cryogenic Temperature
• Valley blockade in a silicon double quantum dot
• Proposal for a cavity-induced measurement of the exchange coupling in quantum dots
• Measurement-based interleaved randomised benchmarking using IBM processors
• Unveiling the nonclassicality within quasi-distribution representations through deep learning
• Few-electrode design for silicon MOS quantum dots
• Interplay of Zeeman Splitting and Tunnel Coupling in Coherent Spin Qubit Shuttling
• RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices
• A diverse set of two-qubit gates for spin qubits in semiconductor quantum dots
• Machine Learning Force Field for Thermal Oxidation of Silicon
• Photodriven germanium hole qubit
• Charge state estimation in quantum dots using a Bayesian approach
• Fast spin-valley-based quantum gates in Si with micromagnets
• A SWAP Gate for Spin Qubits in Silicon
• Decoherence in Exchange-Coupled Quantum Spin Qubit Systems: Impact of Multiqubit Interactions and Geometric Connectivity
• Universal singlet-triplet qubits implemented near the transverse sweet spot
• Stroboscopically Robust Gates For Capacitively Coupled Singlet-Triplet Qubits
• Decoherence of Coupled Flip-Flop Qubits Due to Charge Noise
• Landau quantization of a circular Quantum Dot using the BenDaniel-Duke boundary condition
• Two qubit gate with macroscopic singlet-triplet qubits in synthetic spin-one chains in InAsP quantum dot nanowires
• Bandwidth-limited and noisy pulse sequences for single qubit operations in semiconductor spin qubits
• Effects of leakage on the realization of a discrete time crystal in a chain of singlet-triplet qubits
• State Initialization of a Hot Spin Qubit in a Double Quantum Dot by Measurement-Based Quantum Feedback Control
• Entangling nuclear spins in distant quantum dots via an electron bus
• Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements
• Quantum correlation generation capability of experimental processes
• Limitations of the $g$-tensor formalism of semiconductor spin qubits
• Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots
• Isotope engineering of silicon and diamond for quantum computing and sensing applications
• Exact diagonalization study of double quantum dots in parallel geometry in zero-bandwidth limit
• Concatenated continuous driving of silicon qubit by amplitude and phase modulation
• Transport-induced suppression of nuclear field fluctuations in multi-quantum-dot systems
• Quasiperiodic trajectories drawn by the Bloch vector of the thermal multiphoton Jaynes-Cummings model
• A generalized model of the noise spectrum of a two-level fluctuator in the presence of an electron subbath
• Blind-spots of Randomized Benchmarking Under Temporal Correlations
• Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures
• 4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot
• Designs for a two-dimensional Si quantum dot array with spin qubit addressability
• Fully tunable hyperfine interactions of hole spin qubits in Si and Ge quantum dots
• Filter Function Formalism and Software Package to Compute Quantum Processes of Gate Sequences for Classical Non-Markovian Noise
• Limitations on the maximal level of entanglement of two singlet-triplet qubits in GaAs quantum dots
• Enhanced local addressability of a spin array with local exchange pulses and global microwave driving
• Exploring entanglement resource in Si quantum dot systems with operational quasiprobability approach
• Decoherence dynamics of entangled quantum states in the $XXX$ central spin model
• Review of Superconducting Qubit Devices and Their Large-Scale Integration
• Triple Antidot Molecules
• Inter- and intra-band Coulomb interactions between holes in silicon nanostructures
• Four-state discrimination for a pair of spin qubits via gate reflectometry
• Robust iSWAP gates for semiconductor spin qubits with local driving
• Coupling a ${}^{73}$Ge nuclear spin to an electrostatically defined quantum dot
• Localized all-optical control of single semiconductor quantum dots through plasmon-polariton-induced screening
• Digital-Controlled Method of Conveyor-Belt Spin Shuttling in Silicon for Large-Scale Quantum Computation
• Quantum Chaos and Universal Trotterisation Behaviours in Digital Quantum Simulations