Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
arXiv:1604.04020 · doi:10.1063/1.4945736
Abstract
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160-240 ueV with an electric field dependence 1.2 +- 0.2 meV/(MV/m). A large valley splitting is an essential requirement to implement a physical electron spin qubit in a silicon quantum dot.
arXiv comment10 pages, 3 figures
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Cited by in corpus (5)
- Large tunable valley splitting in edge-free graphene quantum dots on boron nitride
- Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
- Electric-field tuning of the valley splitting in silicon corner dots
- Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
- Spin relaxation of a donor electron coupled to interface states