Charge dynamics and spin blockade in a hybrid double quantum dot in silicon

Abstract

Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability and scalability. Here we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterise the charge dynamics, which reveals a charge T2* of 200 ps and a relaxation time T1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.

6 pages, 4 figures, supplementary information (3 pages, 4 figures)

References in corpus (13)

• Driven coherent oscillations of a single electron spin in a quantum dot
• An addressable quantum dot qubit with fault-tolerant control fidelity
• Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
• Solid state quantum memory using the 31P nuclear spin
• Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization
• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Transport spectroscopy of a single dopant in a gated silicon nanowire
• A high-sensitivity gate-based charge sensor in silicon
• Efficient multiqubit entanglement via a spin-bus
• Mesoscopic admittance of a double quantum dot
• Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
• A Radio Frequency Charge Parity Meter
• Control of the ionization state of 3 single donor atoms in silicon

Cited by in corpus (24)

• Probing quantum devices with radio-frequency reflectometry
• Quantum and Tunnelling Capacitance in Charge and Spin Qubits
• Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
• Gate-sensing coherent charge oscillations in a silicon field-effect transistor
• Radio-frequency capacitive gate-based sensing
• Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate
• Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit
• Thermal entanglement and quantum coherence of a single electron in a double quantum dot with Rashba Interaction
• Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions
• Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon
• Reconfigurable quadruple quantum dots in a silicon nanowire transistor
• Transport through an impurity tunnel coupled to a Si/SiGe quantum dot
• Valley filtering and spatial maps of coupling between silicon donors and quantum dots
• Variable and orbital-dependent spin-orbit field orientations in a InSb double quantum dot characterized via dispersive gate sensing
• Radio-frequency C-V measurements with sub-attofarad sensitivity
• Simple operation sequences to couple and interchange quantum information between spin qubits of different kinds
• Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
• Hyperfine-assisted fast electric control of dopant nuclear spins in semiconductors
• Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
• Real-time milli-Kelvin thermometry in a semiconductor qubit architecture
• Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
• Nonmonotonic buildup of spin-singlet correlations in a double quantum dot
• Hyperfine-assisted decoherence of a phosphorus nuclear-spin qubit in silicon
• Flux-Tunable Hybridization in a Double Quantum Dot Interferometer