Global control and fast solid-state donor electron spin quantum computing

Abstract

We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a naive implementation of electron spin qubits provides only modest improvement over the Kane scheme, however through the introduction of global gate control we are able to take full advantage of the fast electron evolution timescales. We estimate that the latent clock speed is 100-1000 times that of the nuclear spin quantum computer with the ratio $T_2/T_{ops}$ approaching the $10^6$ level.

9 pages, 9 figures

References in corpus (4)

• Electrical readout of a spin qubit without double occupancy
• Error Rate of the Kane Quantum Computer CNOT Gate in the Presence of Dephasing
• Gates for the Kane Quantum Computer in the Presence of Dephasing
• Voltage Control of Exchange Coupling in Phosphorus Doped Silicon

Cited by in corpus (45)

• Silicon Quantum Electronics
• Spin transport and quasi 2D architectures for donor-based quantum computing
• Theory of valley-orbit coupling in a Si/SiGe quantum dot
• High precision quantum control of single donor spins in silicon
• Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
• Stark Tuning of Donor Electron Spins in Silicon
• Robust CNOT gates from almost any interaction
• Resonant tunnelling features in the transport spectroscopy of quantum dots
• Orbital Stark effect and quantum confinement transition of donors in silicon
• Robust two-qubit gates for donors in silicon controlled by hyperfine interactions
• Coherent electron transport by adiabatic passage in an imperfect donor chain
• Conditional control of donor nuclear spins in silicon using Stark shifts
• Implementation of Fault-tolerant Quantum Logic Gates via Optimal Control
• Engineered valley-orbit splittings in quantum confined nanostructures in silicon
• Spin-lattice relaxation times of single donors and donor clusters in silicon
• Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
• Effective mass theory of monolayer δ-doping in the high-density limit
• Quantum non-demolition measurements of single donor spins in semiconductors
• Implementation of Quantum Gates via Optimal Control
• Valley interference and spin exchange at the atomic scale in silicon
• A precise CNOT gate in the presence of large fabrication induced variations of the exchange interaction strength
• Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
• Lifetime enhanced transport in silicon due to spin and valley blockade
• Radio frequency reflectometry and charge sensing of a precision placed donor in silicon
• Coherent Tunneling Adiabatic Passage with the Alternating Coupling Scheme
• Controlled single electron transfer between Si:P dots
• Large Stark tuning of donor electron spin quantum bits in germanium
• Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions
• Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
• Optimal control of the silicon-based donor electron spin quantum computing
• Information free quantum bus for generating stabiliser states
• Molecular orbital calculations of two-electron states for P donor solid-state spin qubits
• Towards Large-Scale Quantum Computation
• Optically induced spin to charge transduction in donor spin read-out
• Single-tone pulse sequences and robust two-tone shaped pulses for three silicon spin qubits with always-on exchange
• Anisotropic Stark Effect and Electric-Field Noise Suppression for Phosphorus Donor Qubits in Silicon
• Cross-talk compensation of hyperfine control in donor qubit architectures
• Exchange between deep donors in semiconductors: a quantum defect approach
• Dynamics of a driven spin coupled to an antiferromagnetic spin bath
• Optimisation of electrically-driven multi-donor quantum dot qubits
• Improving quantum gate fidelities using optimized Euler angles
• A Computational Workflow for Designing Silicon Donor Qubits
• Proposal for a loophole-free Bell test with electron spins of donors
• Potential Errors in a Scheme of Universal Quantum Gates in Kane's Model
• Capacitance modeling of complex topographical silicon quantum dot structures