Optically induced spin to charge transduction in donor spin read-out

Abstract

The proposed read-out configuration D+D- for the Kane Si:P architecture[Nature 393, 133 (1998)] depends on spin-dependent electron tunneling between donors, induced adiabatically by surface gates. However, previous work has shown that since the doubly occupied donor state is so shallow the dwell-time of the read-out state is less than the required time for measurement using a single electron transistor (SET). We propose and analyse single-spin read-out using optically induced spin to charge transduction, and show that the top gate biases, required for qubit selection, are significantly less than those demanded by the Kane scheme, thereby increasing the D+D- lifetime. Implications for singlet-triplet discrimination for electron spin qubits are also discussed.

8 pages, 10 figures; added reference, corrected typo

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Cited by in corpus (10)

• Silicon Quantum Electronics
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• Spin transport and quasi 2D architectures for donor-based quantum computing
• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
• Single-qubit operations in the double-donor structure driven by strongly detuned optical pulses
• Single-qubit operations in the double-donor structure driven by optical and voltage pulses
• A theoretical investigation into the microwave spectroscopy of a phosphorus-donor charge-qubit in silicon: Coherent control in the Si:P quantum computer architecture
• A multiplexed single electron transistor for application in scalable solid-state quantum computing
• Quantum Interfaces Using Nanoscale Surface Plasmons
• Proposal for a loophole-free Bell test with electron spins of donors