activity
20012005
most citedCoherent electronic transfer in quantum dot systems using adiabatic passage

285 citations · 917 across the 13 of their papers we have counts for

collaborators

15 papers

quant-ph200543 cited

Identifying a Two-State Hamiltonian in the Presence of Decoherence

Jared H. Cole, Andrew D. Greentree, Daniel K. L. Oi +3

Mapping the system evolution of a two-state system allows the determination of the effective system Hamiltonian directly. We show how this can be achieved even if the system is dec…

quant-ph200551 cited

Quantum information transport to multiple receivers

Andrew D. Greentree, Simon J. Devitt, Lloyd C. L. Hollenberg

The importance of transporting quantum information and entanglement with high fidelity cannot be overemphasized. We present a scheme based on adiabatic passage that allows for tran…

cond-mat.mes-hall20053 cited

Analysis and Geometric Optimization of Single Electron Transistors for Read-Out in Solid-State Quantum Computing

Vincent I. Conrad, Andrew D. Greentree, David N. Jamieson +1

The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for…

quant-ph200587 cited

Identifying an Experimental Two-State Hamiltonian to Arbitrary Accuracy

Jared H. Cole, Sonia G. Schirmer, Andrew D. Greentree +3

Precision control of a quantum system requires accurate determination of the effective system Hamiltonian. We develop a method for estimating the Hamiltonian parameters for some un…

cond-mat.mtrl-sci200477 cited

Diamond chemical vapor deposition on optical fibers for fluorescence waveguiding

J. R. Rabeau, S. T. Huntington, A. D. Greentree +1

A technique has been developed for depositing diamond crystals on the endfaces of optical fibers and capturing the fluorescence generated by optically active defects in the diamond…

cond-mat.mtrl-sci200418 cited

The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

D. R. McCamey, M. Francis, J. C. McCallum +3

Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-…