Silicon quantum computation based on magnetic dipolar coupling

Abstract

A dipolar gate alternative to the exchange gate based Kane quantum computer is proposed where the qubits are electron spins of shallow group V donors in silicon. Residual exchange coupling is treated as gate error amenable to quantum error correction, removing the stringent requirements on donor positioning characteristic of all silicon exchange-based implementations [B. Koiller et al., Phys. Rev. Lett. 88, 027903 (2002)]. Contrary to common speculation, such a scheme is scalable with no overhead in gating time even though it is based on long-range dipolar inter-qubit coupling.

Accepted for publication in Phys. Rev. A

References in corpus (5)

• Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
• Gate control of spin dynamics in III-V semiconductor quantum dots
• Electron spin phase relaxation of phosphorus donors in nuclear spin enriched silicon
• Electron Exchange Coupling for Single Donor Solid-State Qubits
• Pseudospin Quantum Computation in Semiconductor Nanostructures

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