Probing a Single Nuclear Spin in a Silicon Single Electron Transistor

Abstract

We study single electron transport across a single Bi dopant in a Silicon Nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin $I=9/2$ affects the transport characteristics of the device. In the sequential tunneling regime we find that at, temperatures in the range of $100mK$, $dI/dV$ curves reflect the zero field hyperfine splitting as well as its evolution under an applied magnetic field. Our non-equilibrium quantum simulations show that nuclear spins can be partially polarized parallel or antiparallel to the electronic spin just tuning the applied bias.

4 pages, 4 figures

References in corpus (13)

• Quantum Computing
• Single-shot read-out of an individual electron spin in a quantum dot
• Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization
• Transport spectroscopy of a single dopant in a gated silicon nanowire
• Dynamic Nuclear Polarization with Single Electron Spins
• Large nuclear Overhauser fields detected in vertically-coupled double quantum dots
• Single Electron Transport in electrically tunable nanomagnets
• Bismuth in silicon qubits: the role of EPR cancellation resonances
• Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor
• Optical Detection of a Single Nuclear Spin
• Single-dopant resonance in a single-electron transistor
• Observation of Hysteretic Transport Due to Dynamic Nuclear Spin Polarization in a GaAs Lateral Double Quantum Dot
• Inelastic electron tunneling spectroscopy of a single nuclear spin

Cited by in corpus (1)

• Spin decoherence of magnetic atoms on surfaces