Hyperfine structure and nuclear hyperpolarization observed in the bound exciton luminescence of Bi donors in natural Si

Abstract

As the deepest group V donor in Si, Bi has by far the largest hyperfine interaction, and also a large I=9/2 nuclear spin. At zero field this splits the donor ground state into states having total spin 5 and 4, which are fully resolved in the photoluminescence spectrum of Bi donor bound excitons. Under a magnetic field, the 60 expected allowed transitions cannot be individually resolved, but the effects of the nuclear spin distribution, -9/2 <= I_z <= 9/2, are clearly observed. A strong hyperpolarization of the nuclear spin, with sign opposite to the expected equilibrium polarization, is observed to result from the nonresonant optical excitation. This is very similar to the recently reported optical hyperpolarization of P donors observed by EPR at higher magnetic fields. We introduce a new model to explain this effect, and predict that it may be very fast.

4 pages, 3 figures, 1 table

References in corpus (2)

• Solid state quantum memory using the 31P nuclear spin
• Fast nuclear spin hyperpolarization of phosphorus in silicon

Cited by in corpus (18)

• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Initializing, manipulating and storing quantum information with bismuth dopants in silicon
• Hybrid solid state qubits: the powerful role of electron spins
• Bismuth in silicon qubits: the role of EPR cancellation resonances
• Quantum control of hybrid nuclear-electronic qubits
• Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
• Optically detected NMR of optically hyperpolarized 31P neutral donors in 28Si
• Analysis of quantum coherence in bismuth-doped silicon: a system of strongly coupled spin qubits
• Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si
• Radiative cooling of a spin ensemble
• Measuring central-spin interaction with a spin bath by pulsed ENDOR: Towards suppression of spin diffusion decoherence
• Inductive measurement of optically hyperpolarized phosphorous donor nuclei in an isotopically-enriched silicon-28 crystal
• Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination
• Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields
• Optical Control of Donor Spin Qubits in Silicon
• Zero field optical magnetic resonance study of phosphorus donors in 28-silicon
• Spatially-resolved decoherence of donor spins in silicon strained by a metallic electrode
• Probing a Single Nuclear Spin in a Silicon Single Electron Transistor