Fast nuclear spin hyperpolarization of phosphorus in silicon

Abstract

We experimentally demonstrate a method for obtaining nuclear spin hyperpolarization, that is, polarization significantly in excess of that expected for a thermal equilibrium. By exploiting a modified Overhauser process, we obtain more than 68% nuclear anti-polarization of phosphorus donors in silicon. This polarization is reached with a time constant of ~150 seconds, at a temperature of 1.37 K and a magnetic field of 8.5 T. The ability to obtain such large polarizations is discussed with regards to its significance for quantum information processing and magnetic resonance imaging.

4 pages, 3 figures

References in corpus (4)

• Solid state quantum memory using the 31P nuclear spin
• A multi-frequency high-field pulsed EPR / ENDOR spectrometer
• Long spin coherence in silicon with an electrical spin trap readout
• Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields

Cited by in corpus (1)

• Simultaneous sub-second hyperpolarization of the nuclear and electron spins of phosphorus in silicon