Long spin coherence in silicon with an electrical spin trap readout

Abstract

Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 microseconds: 50 times longer than the previous maximum for electrically-detected spin readout experiments.

13 pages, 3 figures. References updated, figure removed to reduce length of paper

References in corpus (4)

• Driven coherent oscillations of a single electron spin in a quantum dot
• A multi-frequency high-field pulsed EPR / ENDOR spectrometer
• Electrical detection of spin echoes for phosphorus donors in silicon
• Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields

Cited by in corpus (2)

• Fast nuclear spin hyperpolarization of phosphorus in silicon
• Spin-dependent scattering in a silicon transistor