Long spin coherence in silicon with an electrical spin trap readout

Abstract

Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 microseconds: 50 times longer than the previous maximum for electrically-detected spin readout experiments.

13 pages, 3 figures. References updated, figure removed to reduce length of paper

References in corpus (9)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Electronic measurement and control of spin transport in Silicon
• Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
• Suppressing Spin Qubit Dephasing by Nuclear State Preparation
• Electrical detection of 31P spin quantum states
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• A multi-frequency high-field pulsed EPR / ENDOR spectrometer
• Electrical detection of spin echoes for phosphorus donors in silicon
• Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields

Cited by in corpus (30)

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• Bismuth in silicon qubits: the role of EPR cancellation resonances
• Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance
• Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon
• Electrical Detection of Coherent Nuclear Spin Oscillations in Phosphorus-Doped Silicon Using Pulsed ENDOR
• Analysis of quantum coherence in bismuth-doped silicon: a system of strongly coupled spin qubits
• Optimal quantum multi-parameter estimation and application to dipole- and exchange-coupled qubits
• High Field Phenomena of Qubits
• Critical issues in the formation of quantum computer test structures by ion implantation
• Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon
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• Vibration-induced field fluctuations in a superconducting magnet
• Measuring central-spin interaction with a spin bath by pulsed ENDOR: Towards suppression of spin diffusion decoherence
• Inductive measurement of optically hyperpolarized phosphorous donor nuclei in an isotopically-enriched silicon-28 crystal
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• Pulsed Low-Field Electrically Detected Magnetic Resonance
• Electrically detected magnetic resonance using radio-frequency reflectometry
• CW and pulsed electrically detected magnetic resonance spectroscopy at 263 GHz/12 T on operating amorphous silicon solar cells
• Electrically detected spin echoes of donor nuclei in silicon
• Preparation of quantum states of two spin-$\frac{1}{2}$ particles in the form of the Schmidt decomposition
• Deterministic preparation of Dicke states of donor nuclear spins in silicon by cooperative pumping
• Real Time Electrical Detection of Coherent Spin Oscillations
• High Resolution Microimaging with Pulsed Electrically-Detected Magnetic Resonance
• Quantum read-out and fast initialization of nuclear spin qubits with electric currents
• NMR study of optically hyperpolarized phosphorus donor nuclei in silicon
• Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots