Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance
arXiv:0908.3612 · doi:10.1103/PhysRevLett.104.046402
Abstract
We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multi-frequency pump-probe experiment in pulsed electrically detected magnetic resonance, we demonstrate that the dominant spin-dependent recombination transition occurs between phosphorus donors and Si/SiO2 interface states. Combining pulses at different microwave frequencies allows us to selectively address the two spin subsystems participating in the recombination process and to coherently manipulate and detect the relative spin orientation of the two recombination partners.
5 pages, 3 figures
References in corpus (7)
- Driven coherent oscillations of a single electron spin in a quantum dot
- Electrical detection of 31P spin quantum states
- Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
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- Long spin coherence in silicon with an electrical spin trap readout
- Phosphorus donors in highly strained silicon
- Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields
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