Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields

Abstract

An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon dioxide at high magnetic field (B_0 ~ 8.5 T) is presented. Electrically detected magnetic resonance (EDMR) spectra of the hyperfine split 31P donor electron transitions and paramagnetic interface defects were conducted at temperatures in the range 3 K < T < 12 K. The results at these previously unattained (for EDMR) magnetic field strengths reveal the dominance of spin-dependent processes that differ from the previously well investigated recombination between the 31P donor and the P_b state, which dominates at low magnetic fields. While magnetic resonant current responses due to 31P and P_b states are still present, they do not correlate and only the P_b contribution can be associated with an interface process due to spin-dependent tunneling between energetically and physically adjacent P_b states. This work provides an experimental demonstration of spin-dependent tunneling between physically adjacent and identical electronic states as proposed by Kane for readout of donor qubits.

10 pages, 4 figures

References in corpus (8)

• Electronic measurement and control of spin transport in Silicon
• Electrical detection of 31P spin quantum states
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Electrical detection of spin echoes for phosphorus donors in silicon
• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
• Transport and recombination through weakly coupled localized spin pairs in semiconductors during coherent spin excitation
• Controlled single electron transfer between Si:P dots
• Spin-dependent recombination - an electronic readout mechanism for solid state quantum computers

Cited by in corpus (12)

• Fast nuclear spin hyperpolarization of phosphorus in silicon
• $T_1$- and $T_2$-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
• Long spin coherence in silicon with an electrical spin trap readout
• Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance
• Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon
• Revealing weak spin-orbit coupling effects on charge carriers in a $\pi$-conjugated polymer
• High Field Phenomena of Qubits
• Numerical study of spin-dependent transition rates within pairs of dipolar and strongly exchange coupled spins with (s=1/2) during magnetic resonant excitation
• Device fabrication and transport measurements of FinFETs built with ${}^{28}$Si SOI wafers towards donor qubits in silicon
• Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near-Zero Field Magnetoresistance Spectra via Least Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation
• Optical dependence of electrically-detected magnetic resonance in lightly-doped Si:P devices
• Electrically Detected Magnetic Resonance Modeling and Fitting: An Equivalent Circuit Approach