Device fabrication and transport measurements of FinFETs built with Si SOI wafers towards donor qubits in silicon
arXiv:0906.1995 · doi:10.1088/0268-1242/24/10/105022
Abstract
We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual Si nuclear spin bath, making isotopically enriched nuclear spin-free Si substrates a promising candidate for forming spin quantum bit devices. The FinFET architecture is fully compatible with single-ion implant detection for donor-based qubits, and the donor spin-state readout through electrical detection of spin resonance. We describe device processing steps and discuss results on electrical transport measurements at 0.3 K.
10 pages, 6 figures
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