A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

Abstract

We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/Vs at a sheet carrier density of 4.6E11 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.

8 pages, 3 figures

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• Quantum Computation with Quantum Dots
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• Single-electron quantum dot in Si/SiGe with integrated charge-sensing
• Singlet-Triplet Physics and Shell Filling in Carbon Nanotube Double Quantum Dots
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Cited by in corpus (8)

• Silicon Quantum Electronics
• Theory of Single Electron Spin Relaxation in Si/SiGe Lateral Coupled Quantum Dots
• Few electron double quantum dot in an isotopically purified ${}^{28}$Si quantum well
• Theory of Spin Relaxation in Two-Electron Lateral Coupled Si/SiGe Quantum Dots
• Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure
• Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
• Equilibration in closed quantum systems: Application to spin qubits
• Device fabrication and transport measurements of FinFETs built with ${}^{28}$Si SOI wafers towards donor qubits in silicon