Single-electron quantum dot in Si/SiGe with integrated charge-sensing

Abstract

Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot.

3 pages, 3 figures, accepted version, to appear in Applied Physics Letters

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Cited by in corpus (42)

• Silicon Quantum Electronics
• Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
• Theory of valley-orbit coupling in a Si/SiGe quantum dot
• Hyperfine interactions in silicon quantum dots
• Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot
• Exchange coupling in silicon quantum dots: Theoretical considerations for quantum computation
• Observation of the single-electron regime in a highly tunable silicon quantum dot
• Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot
• Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
• Colloquium: Advances in automation of quantum dot devices control
• Hubbard model description of silicon spin qubits: charge stability diagram and tunnel coupling in Si double quantum dots
• Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface
• Dynamically controlled charge sensing of a few-electron silicon quantum dot
• Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
• Spatial adiabatic passage in a realistic triple well structure
• Nuclear spin dynamics and Zeno effect in quantum dots and defect centers
• Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing
• Fast tunnel rates in Si/SiGe one-electron single and double quantum dots
• Effective mass theory of monolayer δ-doping in the high-density limit
• Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon
• Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
• Charge Sensing in Intrinsic Silicon Quantum Dots
• Palladium gates for reproducible quantum dots in silicon
• Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot
• A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching
• Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot
• Ambipolar quantum dots in intrinsic silicon
• Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure
• A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure
• Transport through an impurity tunnel coupled to a Si/SiGe quantum dot
• Electron spin blockade and singlet-triplet transition in a silicon single electron transistor
• Equilibration in closed quantum systems: Application to spin qubits
• Electrical manipulation of an electronic two-state system in Ge/Si quantum dots
• Coupled vertical double quantum dots at single-hole occupancy
• Coherence build up and laser thresholds from nanolasers to macroscopic lasers
• Valley splitting in a Si/SiGe quantum point contact
• Finite Quantum Grand Canonical Ensemble and Temperature from Single Electron Statistics in a Mesoscopic Device
• Magnetometry of micro-magnets with electrostatically defined Hall bars
• Depletion-mode Quantum Dots in Intrinsic Silicon
• Robust quantum dots charge autotuning using neural network uncertainty
• Efficient adaptive Bayesian estimation of a slowly fluctuating Overhauser field gradient
• Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots