Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

Abstract

Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a 3D capacitance model of the integrated sensor and quantum dot system.

4 Pages, 3 Figures

References in corpus (8)

• Single-shot read-out of an individual electron spin in a quantum dot
• Driven coherent oscillations of a single electron spin in a quantum dot
• Electrically driven single electron spin resonance in a slanting Zeeman field
• Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
• Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot
• Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
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• Enhancement mode double top gated MOS nanostructures with tunable lateral geometry

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• Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits
• Dynamically controlled charge sensing of a few-electron silicon quantum dot
• Annealing shallow Si/SiO${}_2$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors
• Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing
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• Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot
• Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
• Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure
• Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling
• Implications of Electronics Constraints for Solid-State Quantum Error Correction and Quantum Circuit Failure Probability
• Detection of variable tunneling rates in silicon quantum dots