113 citations · 537 across the 18 of their papers we have counts for
18 papers
Spin-orbit enabled quantum transport channels in a two-hole double quantum dot
Alex Bogan, Sergei Studenikin, Marek Korkusinski +7
We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the…
Atomic Precision Advanced Manufacturing for Digital Electronics
Daniel R. Ward, Scott W. Schmucker, Evan M. Anderson +8
An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex to…
Low Thermal Budget High-k/Metal Surface Gate for Buried Donor-Based Devices
Evan M. Anderson, DeAnna M. Campbell, Leon N. Maurer +8
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics.…
Landau-Zener-Stuckelberg-Majorana interferometry of a single hole
Alex Bogan, Sergei Studenikin, Marek Korkusinski +6
We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum…
Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
T. M. Lu, L. A. Tracy, D. Laroche +5
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices…
Signatures of localization in the effective metallic regime of high mobility Si MOSFETs
S. Das Sarma, E. H. Hwang, K. Kechedzhi +1
Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for…