Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

Abstract

We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. Comparison with numerical simulations indicates that the applied gate voltages serve to offset an intrinsic asymmetry in the physical device. We also show a transition from a large single dot to two well isolated coupled dots, where the central gate of the device is used to controllably tune the interdot coupling.

4 pages, 3 figures, to be published in Applied Physics Letters

References in corpus (3)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Electrostically defined few-electron double quantum dot in silicon
• A gate-defined silicon quantum dot molecule

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