Efficient self-consistent quantum transport simulator for quantum devices

Abstract

We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled CBR-Poisson equations is achieved by using the predictor-corrector iteration scheme with the optional Anderson acceleration. In addition, we introduce a new way to convert an equilibrium electrostatic barrier potential calculated from an external simulator to an effective doping profile, which is then used by the CBR-Poisson code for transport simulation of the barrier under non-zero biases. The code has been applied to simulate the quantum transport in a double barrier structure and across a tunnel barrier in a silicon double quantum dot. Extremely fast self-consistent 1D simulations of the differential conductance across a tunnel barrier in the quantum dot show better qualitative agreement with experiment than non-self-consistent simulations.

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• Spectroscopy of multi-electrode tunnel barriers
• Influence of imperfections on tunneling rate in $\delta$-layer junctions
• Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants
• A Computational Workflow for Designing Silicon Donor Qubits
• Strong Quantization of Current-carrying Electron States in $\delta$-layer Systems
• Predictive first-principles simulations for co-designing next-generation energy-efficient AI systems