Conductivity and size quantization effects in semiconductor $\delta$-layer systems

Abstract

We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus $\delta$-layers in silicon and the corresponding $\delta$-layer tunnel junctions. In order to evaluate size quantization effects on the conductivity, we consider two principal cases: nanoscale finite-width structures, used in transistors, and infinitely-wide structures, electrical properties of which are typically known experimentally. For devices widths $W<10$~nm, quantization effects are strong and it is shown that the number of propagating modes determines not only the conductivity, but the distinctive spatial distribution of the current-carrying electron states. For $W>10$~nm, the quantization effects practically vanish and the conductivity tends to the infinitely-wide device values. For tunnel junctions, two distinct conductivity regimes are predicted due to the strong conduction band quantization.

References in corpus (4)

• Electronic transport in two dimensional Si:P $\delta$-doped layers
• Efficient self-consistent quantum transport simulator for quantum devices
• CMOS Platform for Atomic-Scale Device Fabrication
• Disordered Si:P nanostructures as switches and wires for nanodevices

Cited by in corpus (6)

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• Electronic structure of boron and aluminum $\delta$-doped layers in silicon
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• Suppression of mid-infrared plasma resonance due to quantum confinement in delta-doped silicon
• Strong Quantization of Current-carrying Electron States in $\delta$-layer Systems
• Predictive first-principles simulations for co-designing next-generation energy-efficient AI systems