CMOS Platform for Atomic-Scale Device Fabrication

Abstract

Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface assembly. However, this typically involves a complex process flow, stringent requirements for an ultra high vacuum environment, long fabrication times and, consequently, limited throughput and device yield. Here, a device platform is developed that overcomes these limitations by integrating scanning probe based dopant device fabrication with a CMOS-compatible process flow. Silicon on insulator substrates are used featuring a reconstructed Si(001):H surface that is protected by a capping chip and has pre-implanted contacts ready for scanning tunneling microscope (STM) patterning. Processing in ultra-high vacuum is thus reduced to only a few critical steps which minimizes the complexity, time and effort required for fabrication of the nanoscale dopant devices. Subsequent reintegration of the samples into the CMOS process flow not only simplifies the post-processing but also opens the door to successful application of STM based dopant devices as a building block in more complex device architectures. Full functionality of this approach is demonstrated with magnetotransport measurements on degenerately doped STM patterned Si:P nanowires up to room temperature.

14 pages plus supplement

References in corpus (7)

• Quantum Transport in Semiconductor Nanostructures
• Atomically precise placement of single dopants in Si
• Towards the fabrication of phosphorus qubits for a silicon quantum computer
• Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
• Radio frequency reflectometry and charge sensing of a precision placed donor in silicon
• All-optical lithography process for contacting atomically-precise devices
• Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography

Cited by in corpus (9)

• Atomic-scale manipulation and in situ characterization with scanning tunneling microscopy
• The impact of stochastic incorporation on atomic-precision Si:P arrays
• Roadmap on Atomic-scale Semiconductor Devices
• Observation and origin of the $\Delta$-manifold in Si:P $\delta$-layers
• Conductivity and size quantization effects in semiconductor $\delta$-layer systems
• Accelerated Lifetime Testing and Analysis of Delta-doped Silicon Test Structures
• Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication
• Fermionic duality: General symmetry of open systems with strong dissipation and memory
• First principles band structure of interacting phosphorus and boron/aluminum $\delta$-doped layers in silicon