All-optical lithography process for contacting atomically-precise devices

Abstract

We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

References in corpus (4)

• Atomically precise placement of single dopants in Si
• Towards the fabrication of phosphorus qubits for a silicon quantum computer
• Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
• Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography

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• Accelerated Lifetime Testing and Analysis of Delta-doped Silicon Test Structures
• Suppression of mid-infrared plasma resonance due to quantum confinement in delta-doped silicon