28 citations · 127 across the 12 of their papers we have counts for
12 papers
Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
Luis Fabián Peña, Justine C. Koepke, J. Houston Dycus +4
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle…
Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy
Luca Basso, Pauli Kehayias, Jacob Henshaw +7
The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced…
Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing
Quinn Campbell, Justine C. Koepke, Jeffrey A. Ivie +6
Atomic-precision advanced manufacturing enables the placement of dopant atoms within 1 lattice site in crystalline Si. However, it has recently been shown that reaction kineti…
Atomic step disorder on polycrystalline surfaces leads to spatially inhomogeneous work functions
Morgann Berg, Sean W. Smith, David A. Scrymgeour +11
Structural disorder causes materials surface electronic properties, e.g. work function () to vary spatially, yet it is challenging to prove exact causal relationships to underly…
The impact of stochastic incorporation on atomic-precision Si:P arrays
Jeffrey A. Ivie, Quinn Campbell, Justin C. Koepke +9
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within 1 nm of a target…
AlCl-dosed Si(100)-21: Adsorbates, chlorinated Al chains, and incorporated Al
Matthew S. Radue, Sungha Baek, Azadeh Farzaneh +8
The adsorption of AlCl on Si(100) and the effect of annealing the AlCl-dosed substrate was studied to reveal key surface processes for the development of atomic-precisi…