28 citations · 127 across the 12 of their papers we have counts for
5 papers · 1 filter
Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
Luis Fabián Peña, Justine C. Koepke, J. Houston Dycus +4
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle…
Atomic step disorder on polycrystalline surfaces leads to spatially inhomogeneous work functions
Morgann Berg, Sean W. Smith, David A. Scrymgeour +11
Structural disorder causes materials surface electronic properties, e.g. work function () to vary spatially, yet it is challenging to prove exact causal relationships to underly…
AlCl-dosed Si(100)-21: Adsorbates, chlorinated Al chains, and incorporated Al
Matthew S. Radue, Sungha Baek, Azadeh Farzaneh +8
The adsorption of AlCl on Si(100) and the effect of annealing the AlCl-dosed substrate was studied to reveal key surface processes for the development of atomic-precisi…
A model for atomic precision p-type doping with diborane on Si(100)-21
Quinn Campbell, Jeffrey A. Ivie, Ezra Bussmann +3
Diborane (BH) is a promising molecular precursor for atomic precision p-type doping of silicon that has recently been experimentally demonstrated [T. {Š}kere{ň}, \textit{et…
Imaging and registration of buried atomic-precision donor devices using scanning capacitance microscopy
E. Bussmann, M. Rudolph, G. S. Subramania +7
We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling…