566 citations · 1.5k across the 29 of their papers we have counts for
29 papers
First principles band structure of interacting phosphorus and boron/aluminum -doped layers in silicon
Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1
Silicon can be heavily doped with phosphorus in a single atomic layer (a layer), significantly altering the electronic structure of the conduction bands within the material. Re…
First-principles dissociation pathways of BCl on the Si(100)-21 surface
Quinn T. Campbell, Shashank Misra, Jeffrey A. Ivie
One of the most promising acceptor precursors for atomic-precision -doping of silicon is BCl. The chemical pathway, and the resulting kinetics, through which BCl adsorbs…
Roadmap on Atomic-scale Semiconductor Devices
Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…
A reduced-temperature process for preparing atomically clean Si(100) and SiGe(100) surfaces with vapor HF
Luis Fabián Peña, Evan M. Anderson, John P. Mudrick +4
Silicon processing techniques such as atomic precision advanced manufacturing (APAM) and epitaxial growth require surface preparations that activate oxide desorption (typically >10…
Electronic structure of boron and aluminum -doped layers in silicon
Quinn T. Campbell, Shashank Misra, Andrew D. Baczewski
Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum -doped layers in silicon with densities above the solid solu…
Random Bitstream Generation using Voltage-Controlled Magnetic Anisotropy and Spin Orbit Torque Magnetic Tunnel Junctions
Samuel Liu, Jaesuk Kwon, Paul W. Bessler +6
Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. The magnetic tunnel junction (MTJ) h…