566 citations · 1.5k across the 29 of their papers we have counts for
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First principles band structure of interacting phosphorus and boron/aluminum -doped layers in silicon
Quinn T. Campbell, Andrew D. Baczewski, Shashank Misra +1
Silicon can be heavily doped with phosphorus in a single atomic layer (a layer), significantly altering the electronic structure of the conduction bands within the material. Re…
First-principles dissociation pathways of BCl on the Si(100)-21 surface
Quinn T. Campbell, Shashank Misra, Jeffrey A. Ivie
One of the most promising acceptor precursors for atomic-precision -doping of silicon is BCl. The chemical pathway, and the resulting kinetics, through which BCl adsorbs…
A reduced-temperature process for preparing atomically clean Si(100) and SiGe(100) surfaces with vapor HF
Luis Fabián Peña, Evan M. Anderson, John P. Mudrick +4
Silicon processing techniques such as atomic precision advanced manufacturing (APAM) and epitaxial growth require surface preparations that activate oxide desorption (typically >10…
Electronic structure of boron and aluminum -doped layers in silicon
Quinn T. Campbell, Shashank Misra, Andrew D. Baczewski
Recent work on atomic-precision dopant incorporation technologies has led to the creation of both boron and aluminum -doped layers in silicon with densities above the solid solu…
Reaction pathways of BCl for acceptor delta-doping of silicon
Quinn Campbell, Kevin J. Dwyer, Sungha Baek +3
BCl is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed…
Accelerated Lifetime Testing and Analysis of Delta-doped Silicon Test Structures
Connor Halsey, Jessica Depoy, DeAnna M. Campbell +7
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale…