566 citations · 1.5k across the 29 of their papers we have counts for
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Random Bitstream Generation using Voltage-Controlled Magnetic Anisotropy and Spin Orbit Torque Magnetic Tunnel Junctions
Samuel Liu, Jaesuk Kwon, Paul W. Bessler +6
Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. The magnetic tunnel junction (MTJ) h…
Suppression of mid-infrared plasma resonance due to quantum confinement in delta-doped silicon
Steve M. Young, Aaron M. Katzenmeyer, Evan M. Anderson +5
The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum…
Influence of imperfections on tunneling rate in -layer junctions
Juan P. Mendez, Shashank Misra, Denis Mamaluy
The atomically precise placement of dopants in semiconductors using scanning tunneling microscopes has been used to create planar dopant-based devices, enabling the exploration of…
Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy
Luca Basso, Pauli Kehayias, Jacob Henshaw +7
The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced…
Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing
Quinn Campbell, Justine C. Koepke, Jeffrey A. Ivie +6
Atomic-precision advanced manufacturing enables the placement of dopant atoms within 1 lattice site in crystalline Si. However, it has recently been shown that reaction kineti…
Reaction pathways of BCl for acceptor delta-doping of silicon
Quinn Campbell, Kevin J. Dwyer, Sungha Baek +3
BCl is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed…