148 citations · 439 across the 9 of their papers we have counts for
9 papers
Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
Luis Fabián Peña, Justine C. Koepke, J. Houston Dycus +4
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle…
Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing
Quinn Campbell, Justine C. Koepke, Jeffrey A. Ivie +6
Atomic-precision advanced manufacturing enables the placement of dopant atoms within 1 lattice site in crystalline Si. However, it has recently been shown that reaction kineti…
The impact of stochastic incorporation on atomic-precision Si:P arrays
Jeffrey A. Ivie, Quinn Campbell, Justin C. Koepke +9
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within 1 nm of a target…
Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
E. Bussmann, John King Gamble, J. C. Koepke +9
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of…
All-optical lithography process for contacting atomically-precise devices
Daniel R. Ward, Michael T. Marshall, DeAnna M. Campbell +5
We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (ST…
Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane
Justin C. Koepke, Joshua D. Wood, Enrique A. Carrion +14
We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane ()…