148 citations · 439 across the 9 of their papers we have counts for
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cond-mat.mtrl-sci2017★ 7 cited
Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
E. Bussmann, John King Gamble, J. C. Koepke +9
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of…
physics.app-ph2017★ 19 cited
All-optical lithography process for contacting atomically-precise devices
Daniel R. Ward, Michael T. Marshall, DeAnna M. Campbell +5
We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (ST…