Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots
arXiv:1111.6873 · doi:10.1103/PhysRevB.86.115322
Abstract
We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field scale is attributed to spin-orbit mediated spin relaxation. On a larger (\sim 400 mT) field scale, a peak in leakage current is seen in some, but not all, Pauli-blocked transitions, and is attributed to spin-flip cotunneling. Both dip and peak structure show good agreement between theory and experiment.
supplementary material here: http://marcuslab.harvard.edu/SiDQDsupp.pdf
References in corpus (10)
- Driven coherent oscillations of a single electron spin in a quantum dot
- Electrically driven single electron spin resonance in a slanting Zeeman field
- Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot
- Tunable spin-selective loading of a silicon spin qubit
- Suppression of spin relaxation in an InAs nanowire double quantum dot
- Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
- Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
- Electrostically defined few-electron double quantum dot in silicon
- Stationary and transient leakage current in the Pauli spin blockade
- Leakage-current lineshapes from inelastic cotunneling in the Pauli spin blockade regime
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