Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction

Abstract

We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz for the first holes, an important step towards a robust hole spin-orbit qubit.

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Cited by in corpus (7)

• Semiconductor Spin Qubits
• Recent advances in hole-spin qubits
• Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Charge-noise induced dephasing in silicon hole-spin qubits
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Effect of disorder and strain on the operation of planar Ge hole spin qubits