Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction

Abstract

We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz for the first holes, an important step towards a robust hole spin-orbit qubit.

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• Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
• Magnetic Field Evolution of Spin Blockade in Ge/Si Nanowire Double Quantum Dots
• Landau-Zener-Stuckelberg-Majorana interferometry of a single hole
• Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor
• Spin blockade as a probe of Zeeman interactions in hole quantum dots
• Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Charge-noise induced dephasing in silicon hole-spin qubits
• Ballistic quantum transport through Ge/Si core/shell nanowires
• Pauli spin blockade in CMOS double quantum dot devices
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Double quantum dots defined in bilayer graphene
• Line Shapes of Electric Dipole Spin Resonance in Pauli Spin Blockade
• Few-electrode design for silicon MOS quantum dots
• Effect of disorder and strain on the operation of planar Ge hole spin qubits