Ballistic quantum transport through Ge/Si core/shell nanowires

Abstract

We study ballistic hole transport through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-P$\acute{e}$rot interference patterns as well as conductance plateaus at integer multiples of 2e${}^2$/h at zero magnetic field. Magnetic field evolution of these plateaus reveals large effective Land$\acute{e}$ g-factors. Ballistic effects are observed in nanowires with silicon shell thicknesses of 1 - 3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic subband-resolved transport.

arXiv comment8 pages, 4 figures

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Cited by in corpus (6)

• The germanium quantum information route
• Single layer MoS2 nanoribbon field effect transistor
• Ballistic one-dimensional holes with strong g-factor anisotropy in germanium
• Josephson effect in a few-hole quantum dot
• Ballistic quantum transport through Ge/Si core/shell nanowires
• Highly transparent contacts to the 1D hole gas in ultra-scaled Ge/Si core/shell nanowires