A CMOS silicon spin qubit

Abstract

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform.

12 pages, 4 figures

References in corpus (7)

• Driven coherent oscillations of a single electron spin in a quantum dot
• An addressable quantum dot qubit with fault-tolerant control fidelity
• Universal dynamical decoupling of a single solid-state spin from a spin bath
• A fault-tolerant addressable spin qubit in a natural silicon quantum dot
• Spin-echo of a single electron spin in a quantum dot
• Hole - Nuclear Spin Interaction in Quantum Dots
• Universal phase shift and non-exponential decay of driven single-spin oscillations

Cited by in corpus (264)

• A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
• A programmable two-qubit quantum processor in silicon
• Semiconductor Spin Qubits
• Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
• A four-qubit germanium quantum processor
• Silicon quantum processor unit cell operation above one Kelvin
• Fidelity benchmarks for two-qubit gates in silicon
• Qubits made by advanced semiconductor manufacturing
• Semiconductor Qubits In Practice
• Fast two-qubit logic with holes in germanium
• Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
• Ge hole spin qubit
• Coherent control of single electrons: a review of current progress
• A hole spin qubit in a fin field-effect transistor above 4 kelvin
• A single-hole spin qubit
• Cryogenic MOS Transistor Model
• Semiconductor Quantum Computation
• Review of performance metrics of spin qubits in gated semiconducting nanostructures
• Gate-based single-shot readout of spins in silicon
• Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch
• Single artificial atoms in silicon emitting at telecom wavelengths
• Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
• Electrical spin driving by $g$-matrix modulation in spin-orbit qubits
• Quantum Dot Arrays in Silicon and Germanium
• Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
• Ultrafast coherent control of a hole spin qubit in a germanium quantum dot
• Noisy intermediate-scale quantum computers
• Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures
• The impact of classical control electronics on qubit fidelity
• Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
• Roadmap for gallium arsenide spin qubits
• Roadmap on quantum nanotechnologies
• Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing
• Probing low noise at the MOS interface with a spin-orbit qubit
• Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
• A single hole spin with enhanced coherence in natural silicon
• Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control
• Single-electron control in a foundry-fabricated two-dimensional qubit array
• Coherent Transport of Quantum States by Deep Reinforcement Learning
• Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
• Heavy hole states in Germanium hut wires
• Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
• A silicon quantum-dot-coupled nuclear spin qubit
• Light effective hole mass in undoped Ge/SiGe quantum wells
• A flexible design platform for Si/SiGe exchange-only qubits with low disorder
• Radio-frequency capacitive gate-based sensing
• Recent advances in hole-spin qubits
• Engineering long spin coherence times of spin-orbit systems
• Single-spin qubits in isotopically enriched silicon at low magnetic field
• Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
• Dynamics of hole singlet triplet qubits with large g-factor differences
• Multicore Quantum Computing
• Valley dependent anisotropic spin splitting in silicon quantum dots
• On-demand electrical control of spin qubits
• Colloquium: Advances in automation of quantum dot devices control
• A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
• Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
• Hole spin driving by strain-induced spin-orbit interactions
• Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot
• Shuttling an electron spin through a silicon quantum dot array
• Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
• Low charge noise quantum dots with industrial CMOS manufacturing
• Single-shot readout of hole spins in Ge
• Single-shot readout in graphene quantum dots
• Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
• 99.992 % ${}^{28}$Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits
• Two-qubit logic between distant spins in silicon
• Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation
• Silicon quantum dot devices with a self-aligned second gate layer
• Fully tunable longitudinal spin-photon interactions in Si and Ge quantum dots
• Quantum Computing: An Overview Across the System Stack
• Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing
• Impurity-assisted electric control of spin-valley qubits in monolayer MoS${}_2$
• QASMBench: A Low-level QASM Benchmark Suite for NISQ Evaluation and Simulation
• Large dispersive interaction between a CMOS double quantum dot and microwave photons
• A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
• Landau-Zener-Stuckelberg-Majorana interferometry of a single hole
• Local Temperatures Out of Equilibrium
• Two-qubit logic with anisotropic exchange in a fin field-effect transistor
• Hole Spin Qubits in Ge Nanowire Quantum Dots: Interplay of Orbital Magnetic Field, Strain, and Growth Direction
• Variability of electron and hole spin qubits due to interface roughness and charge traps
• Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor
• A two-dimensional array of single-hole quantum dots
• All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing
• Symmetric Operation of the Resonant Exchange Qubit
• Hole spin manipulation in inhomogeneous and non-separable electric fields
• First-principles hyperfine tensors for electrons and holes in GaAs and silicon
• Quantum Computation Protocol for Dressed Spins in a Global Field
• Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing
• Network architecture for a topological quantum computer in silicon
• Longitudinal and transverse electric field manipulation of hole spin-orbit qubits in one-dimensional channels
• Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots
• Ballistic one-dimensional holes with strong g-factor anisotropy in germanium
• Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
• Electrical control of the Zeeman spin splitting in two-dimensional hole systems
• Spin-orbit dynamics of single acceptor atoms in silicon
• Emergence of the strong tunable linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum
• Is all-electrical silicon quantum computing feasible in the long term?
• Tunable hole spin-photon interaction based on g-matrix modulation
• Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon
• Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot
• Spin of a multielectron quantum dot and its interaction with a neighboring electron
• Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot
• CMOS Position-Based Charge Qubits: Theoretical Analysis of Control and Entanglement
• Ambipolar quantum dots in undoped silicon fin field-effect transistors
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Quantum interferometry with a g-factor-tunable spin qubit
• Hybrid superconductor-semiconductor systems for quantum technology
• Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit
• Towards scalable silicon quantum computing
• Superconducting grid-bus surface code architecture for hole-spin qubits
• Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells
• Palladium gates for reproducible quantum dots in silicon
• A singlet-triplet hole-spin qubit in MOS silicon
• Two-body Wigner molecularization in asymmetric quantum dot spin qubits
• Hole spin qubits in thin curved quantum wells
• High-fidelity single-spin shuttling in silicon
• Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits
• Planar Josephson junctions in germanium: Effect of cubic spin-orbit interaction
• Dispersively probed microwave spectroscopy of a silicon hole double quantum dot
• High-fidelity two-qubit gates of hybrid superconducting-semiconducting singlet-triplet qubits
• Bounds to electron spin qubit variability for scalable CMOS architectures
• Remote capacitive sensing in two-dimension quantum-dot arrays
• Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit
• Miniaturizing neural networks for charge state autotuning in quantum dots
• Charge-noise induced dephasing in silicon hole-spin qubits
• The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)
• Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator
• Enhanced orbital magnetic field effects in Ge hole nanowires
• A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
• Zero field splitting of heavy-hole states in quantum dots
• Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits
• Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
• Superconducting routing platform for large-scale integration of quantum technologies
• CMOS Quantum Computing: Toward A Quantum Computer System-on-Chip
• High-fidelity spin qubit shuttling via large spin-orbit interaction
• Geometry of the dephasing sweet spots of spin-orbit qubits
• Revised theoretical limit of subthreshold swing in field-effect transistors
• Phase driving hole spin qubits
• Towards early fault tolerance on a 2$\times$N array of qubits equipped with shuttling
• All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
• Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors
• Topological-Graph Dependencies and Scaling Properties of a Heuristic Qubit-Assignment Algorithm
• Networked Quantum Services
• Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry
• Ballistic quantum transport through Ge/Si core/shell nanowires
• G-factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field
• Pauli spin blockade in CMOS double quantum dot devices
• Spin-Valley Qubit Dynamics In Exchange Coupled Silicon Quantum Dots
• Spin-orbit enhancement in Si/SiGe heterostructures with oscillating Ge concentration
• Determination of spin-orbit interaction in semiconductor nanostructures via non-linear transport
• Compromise-Free Scaling of Qubit Speed and Coherence
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Feedback-based active reset of a spin qubit in silicon
• Scalable on-chip multiplexing of silicon single and double quantum dots
• Spin and Orbital Spectroscopy in the Absence of Coulomb Blockade in Lead Telluride Nanowire Quantum Dots
• Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture
• Entanglement control and magic angles for acceptor qubits in Si
• Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers
• A sparse spin qubit array with integrated control electronics
• Modelling of spin decoherence in a Si hole qubit perturbed by a single charge fluctuator
• Valley-Free Silicon Fins Caused by Shear Strain
• Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
• Anisotropic $g$-tensors in hole quantum dots: The role of the transverse confinement direction
• Kondo effect in electrostatically defined ZnO quantum dots
• Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots
• A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics
• Gate-tunable Electronic Transport in p-type GaSb Quantum Wells
• Induced quantum dot probe for material characterization
• A quantum dot-based frequency multiplier
• Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots
• Vanishing Zeeman energy in a two-dimensional hole gas
• Single-charge occupation in ambipolar quantum dots
• Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
• Valleytronic full configuration-interaction approach: An application to the excitation spectra of Si double-dot qubits
• Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
• Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes
• Light-hole states in a strained quantum dot: numerical calculation and phenomenological models
• Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls
• Hole weak anti-localization in a strained-Ge surface quantum well
• Single-step high-fidelity three-qubit gates by anisotropic chiral interactions
• Calculation of tunnel-couplings in open gate-defined disordered quantum dot systems
• Optical spin control and coherence properties of acceptor bound holes in strained GaAs
• Level anticrossing effect in single-level or multilevel double quantum dots: Electrical conductance, zero-frequency charge susceptibility and Seebeck coefficient
• Spin qubit manipulation of acceptor bound states in group IV quantum wells
• An upper and lower bound to the orientation-dependent linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum wells
• Low-temperature environments for quantum computation and quantum simulation
• Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
• Fully autonomous tuning of a spin qubit
• Line Shapes of Electric Dipole Spin Resonance in Pauli Spin Blockade
• Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots
• RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot
• Spin-orbit enabled quantum transport channels in a two-hole double quantum dot
• Compact spin qubits using the common gate structure of fin field-effect transistors
• Improving reproducibility of quantum devices with completely undoped architectures
• Gate reflectometry in dense quantum dot arrays
• Acceptor-based qubit in silicon with tunable strain
• Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon
• Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices
• Dynamics of van der Waals Charge Qubit in 2D Bilayers: Ab initio Quantum Transport and Qubit Measurement
• Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip
• All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
• Probing details of spin--orbit coupling through Pauli spin blockade
• Visual explanations of machine learning model estimating charge states in quantum dots
• Isotropic and Anisotropic g-factor Corrections in GaAs Quantum Dots
• Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction
• Leveraging Off-the-Shelf Silicon Chips for Quantum Computing
• A spinless spin qubit
• Toward Axion Signal Extraction in Semiconductor Spin Qubits Via Spectral Engineering
• Highly tunable 2D silicon quantum dot array with coupling beyond nearest neighbors
• Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
• Optimal operation of hole spin qubits
• Coherence of a field-gradient-driven singlet-triplet qubit coupled to many-electron spin states in 28Si/SiGe
• Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor
• Beyond-adiabatic Quantum Admittance of a Semiconductor Quantum Dot at High Frequencies: Rethinking Reflectometry as Polaron Dynamics
• Charge susceptibility and conductances of a double quantum dot
• All-electrical operation of a spin qubit coupled to a high-Q resonator
• Transmission based tomography for spin qubits
• Operating two exchange-only qubits in parallel
• Experimental online quantum dots charge autotuning using neural networks
• Erasure conversion for singlet-triplet spin qubits enables high-performance shuttling-based quantum error correction
• Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
• Compiling the surface code to crossbar spin qubit architectures
• The resource cost of large scale quantum computing
• Electrical readout of spins in the absence of spin blockade
• Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases
• Robust quantum dots charge autotuning using neural network uncertainty
• Radiofrequency cascade readout of coupled spin qubits
• Compact gate-based read-out of multiplexed quantum devices with a cryogenic CMOS active inductor
• Efficient adaptive Bayesian estimation of a slowly fluctuating Overhauser field gradient
• Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots
• Theory of superconducting proximity effect in hole-based hybrid semiconductor-superconductor devices
• Rashba controlled two-electron spin-charge qubits as building blocks of a quantum computer
• Few-electrode design for silicon MOS quantum dots
• Towards hole-spin qubits in Si pMOSFETs within a planar CMOS foundry technology
• Computational Assessment of Silicon Quantum Gate Based on Detuning Mechanism for Quantum Computing
• Performance Assessment of Resonantly Driven Silicon Two-Qubit Quantum Gate
• Second Quantization: Gating a Quantum Dot Through the Sequential Removal of Single Electrons from a Nanoscale Floating Gate
• Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise
• The role of antisymmetric orbitals and electron-electron interactions on the two-particle spin and valley blockade in graphene double quantum dots
• Automatic detection of single-electron regime of quantum dots and definition of virtual gates using U-Net and clustering
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• Variability of hole spin qubits in planar Germanium
• Cancelling second order frequency shifts in Ge hole spin qubits via bichromatic control
• Dressed basis sets for the modeling of exchange interactions in double quantum dots
• Intrinsic Noise of the Single Electron Box
• Highly Tunable Two-Qubit Interactions in Si/SiGe Quantum Dots by Interchanging the Roles of Qubit-Defining Gates
• RF simulation platform of qubit control using FDSOI technology for quantum computing
• Giant Rabi frequencies between qubit and excited hole states in silicon quantum dots
• Low-Temperature Electron Transport in [110] and [100] Silicon Nanowires: A DFT - Monte Carlo study
• Pauli spin blockade at room temperature in double-quantum-dot tunneling through individual deep dopants in silicon
• Micromagnet-free operation of electron spin qubits in Si/Si${}_{1-x}$Ge${}_x$ vertical double quantum dots
• Digital-Controlled Method of Conveyor-Belt Spin Shuttling in Silicon for Large-Scale Quantum Computation
• 4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot
• Inter- and intra-band Coulomb interactions between holes in silicon nanostructures
• Quantum Transport in 40-nm MOSFETs at Deep-Cryogenic Temperatures
• High-temperature operation of a silicon qubit
• Four-state discrimination for a pair of spin qubits via gate reflectometry
• Switchable spin-photon coupling with hole spins in single-quantum dots
• Anomalous zero-field splitting for hole spin qubits in Si and Ge quantum dots
• Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling
• Fully tunable hyperfine interactions of hole spin qubits in Si and Ge quantum dots
• A silicon spin vacuum: isotopically enriched ${}^{28}$silicon-on-insulator and ${}^{28}$silicon from ultra-high fluence ion implantation
• Robust shaped pulses for arrays of superconducting or semiconductor spin qubits with fixed Ising coupling