Hole Spin Coherence in a Ge/Si Heterostructure Nanowire

Abstract

Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^{\ast }\sim 0.18\mu \mathrm{s}$ exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.

15 pages, 4 figures

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Cited by in corpus (46)

• Semiconductor Spin Qubits
• A CMOS silicon spin qubit
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• The germanium quantum information route
• Ge hole spin qubit
• Review of performance metrics of spin qubits in gated semiconducting nanostructures
• Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch
• Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
• Ultrafast coherent control of a hole spin qubit in a germanium quantum dot
• Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
• Nanomaterials for Quantum Information Science and Engineering
• Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot
• Heavy hole states in Germanium hut wires
• Strong spin-orbit interaction and $g$-factor renormalization of hole spins in Ge/Si nanowire quantum dots
• Majorana Fermions in Ge/Si Hole Nanowires
• Recent advances in hole-spin qubits
• Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots
• Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot
• Magnetic Field Evolution of Spin Blockade in Ge/Si Nanowire Double Quantum Dots
• Anisotropic Pauli spin blockade in hole quantum dots
• Landau-Zener-Stuckelberg-Majorana interferometry of a single hole
• Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction
• Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot
• Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Josephson effect in a few-hole quantum dot
• Acoustic phonons and strain in core/shell nanowires
• Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier
• Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator
• Cavity Control over Heavy-Hole Spin Qubits in Inversion-Symmetric Crystals
• Gunn Effect in Silicon Nanowires: Charge Transport under High Electric Field
• Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry
• Ballistic quantum transport through Ge/Si core/shell nanowires
• Electrical control of the hole spin qubit in Si and Ge nanowire quantum dots
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots
• Strongly Interacting Holes in Ge/Si Nanowires
• Dispersive sensing in hybrid InAs/Al nanowires
• Spin qubit manipulation of acceptor bound states in group IV quantum wells
• Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator
• Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
• Improving reproducibility of quantum devices with completely undoped architectures
• Maximizing the purity of a qubit evolving in an anisotropic environment
• Electron-acoustic-phonon interaction in core/shell Ge/Si and Si/Ge nanowires
• Berry-phase induced entanglement of hole-spin qubits in a microwave cavity
• Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases