Josephson effect in a few-hole quantum dot

Abstract

We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a single device: In the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge-Si nanowires as an important platform for hybrid superconductor-semiconductor physics and Majorana fermions.

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Cited by in corpus (14)

• The germanium quantum information route
• Germanium quantum well Josephson field effect transistors and interferometers
• Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction
• Spin-orbit interaction and induced superconductivity in an one-dimensional hole gas
• Hard superconducting gap and diffusion-induced superconductors in Ge-Si nanowires
• Absence of supercurrent sign reversal in a topological junction with a quantum dot
• Majorana bound states in germanium Josephson junctions via phase control
• A quantum dot in germanium proximitized by a superconductor
• Microscopic analysis of proximity-induced superconductivity and metallization effects in superconductor-germanium hole nanowires
• InP/GaSb core-shell nanowires: a novel hole-based platform with strong spin-orbit coupling for full-shell hybrid devices
• Superconducting Proximity Effect in Two-Dimensional Hole Gases
• Phase transformation-induced superconducting aluminium-silicon alloy rings
• Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
• Highly transparent contacts to the 1D hole gas in ultra-scaled Ge/Si core/shell nanowires