Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

Abstract

We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.

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• Printed Circuit Board Metal Powder Filters for Low Electron Temperatures
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Cited by in corpus (17)

• The germanium quantum information route
• Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch
• Nanomaterials for Quantum Information Science and Engineering
• Strong spin-orbit interaction and $g$-factor renormalization of hole spins in Ge/Si nanowire quantum dots
• Generating a topological anomalous Hall effect in a non-magnetic conductor
• Single, double, and triple quantum dots in Ge/Si nanowires
• Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems
• Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction
• Josephson effect in a few-hole quantum dot
• A fabrication guide for planar silicon quantum dot heterostructures
• Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes
• Calculation of tunnel-couplings in open gate-defined disordered quantum dot systems
• An upper and lower bound to the orientation-dependent linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum wells
• Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator
• Non-linear anomalous Hall effect of two-dimensional spin-3/2 heavy holes
• Depletion-mode Quantum Dots in Intrinsic Silicon
• Hole subband dispersions and strong `spin'-orbit coupling in a cylindrical Ge nanowire