Single, double, and triple quantum dots in Ge/Si nanowires

Abstract

We report highly tunable control of holes in Ge/Si core/shell nanowires (NWs). We demonstrate the ability to create single quantum dots (QDs) of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration we observe Pauli spin blockade (PSB). These results open the way to perform hole spin qubit experiments in these devices.

References in corpus (26)

• Quantum Computation with Quantum Dots
• Spins in few-electron quantum dots
• Electron transport through double quantum dots
• Universal Quantum Computation with the Exchange Interaction
• One-Dimensional Hole Gas in Germanium/Silicon Nanowire Heterostructures
• A Coherent Spin-Photon Interface in Silicon
• Prospects for Spin-Based Quantum Computing
• Strong spin-photon coupling in silicon
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• Coherent spin-qubit photon coupling
• Self-Consistent Measurement and State Tomography of an Exchange-Only Spin Qubit
• Strong Spin-Orbit Interaction and Helical Hole States in Ge/Si Nanowires
• An electrostatically defined serial triple quantum dot charged with few electrons
• Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
• Circuit QED with Hole-Spin Qubits in Ge/Si Nanowire Quantum Dots
• Electrically-protected resonant exchange qubits in triple quantum dots
• Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot
• The 3D transport diagram of a triple quantum dot
• Tunable g factor and phonon-mediated hole spin relaxation in Ge/Si nanowire quantum dots
• Resonant tunnelling features in the transport spectroscopy of quantum dots
• Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots
• Magnetic Field Evolution of Spin Blockade in Ge/Si Nanowire Double Quantum Dots
• Anisotropic Pauli spin blockade in hole quantum dots
• Probe and Control of the Reservoir Density of States in Single-Electron Devices
• Highly tuneable hole quantum dots in Ge-Si core-shell nanowires
• Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot

Cited by in corpus (27)

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• Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch
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• Strong spin-orbit interaction and $g$-factor renormalization of hole spins in Ge/Si nanowire quantum dots
• Recent advances in hole-spin qubits
• A two-dimensional array of single-hole quantum dots
• Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction
• Quantum device fine-tuning using unsupervised embedding learning
• Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors
• Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire
• Electrical control of the hole spin qubit in Si and Ge nanowire quantum dots
• Compromise-Free Scaling of Qubit Speed and Coherence
• Electrical control of a spin qubit in InSb nanowire quantum dots: strongly suppressed spin relaxation in high magnetic field
• Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots
• Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
• Modular nanomagnet design for spin qubits confined in a linear chain
• Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator
• Fully autonomous tuning of a spin qubit
• A realistic non-local heat engine based on Coulomb coupled systems
• Performance of high impedance resonators in dirty dielectric environments
• Realistic non-local refrigeration engine based on Coulomb coupled systems
• A non-local cryogenic thermometer based on Coulomb-coupled systems
• Gate control, g-factors and spin orbit energy of p-type GaSb nanowire quantum dot devices
• Robust composite two-qubit gates for silicon-based spin qubits
• Anomalous zero-field splitting for hole spin qubits in Si and Ge quantum dots