4 papers
Strain engineering in Ge/GeSn core/shell nanowires
Simone Assali, Marco Albani, Roberto Bergamaschini +6
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain…
Engineering tunnel junctions on ballistic semiconductor nanowires
J. Damasco, S. T. Gill, S. Gazibegovic +3
Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockade. However, creating nanosca…
Erasing odd-parity states in semiconductor quantum dots coupled to superconductors
Z. Su, R. Zitko, P. Zhang +9
Quantum dots are gate-defined within InSb nanowires, in proximity to NbTiN superconducting contacts. As the coupling between the dot and the superconductor is increased, the odd-pa…
Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots
Matthias Brauns, Joost Ridderbos, Ang Li +2
We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpe…