17 citations · 17 across the 9 of their papers we have counts for
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physics.app-ph2019
Strain engineering in Ge/GeSn core/shell nanowires
Simone Assali, Marco Albani, Roberto Bergamaschini +6
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain…
cond-mat.mes-hall2019
Engineering tunnel junctions on ballistic semiconductor nanowires
J. Damasco, S. T. Gill, S. Gazibegovic +3
Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockade. However, creating nanosca…
cond-mat.mes-hall2019
Erasing odd-parity states in semiconductor quantum dots coupled to superconductors
Z. Su, R. Zitko, P. Zhang +9
Quantum dots are gate-defined within InSb nanowires, in proximity to NbTiN superconducting contacts. As the coupling between the dot and the superconductor is increased, the odd-pa…