Electrical control of the hole spin qubit in Si and Ge nanowire quantum dots

Abstract

Strong, direct Rashba spin-orbit coupling in Si, Ge, and the Ge/Si core/shell nanowire quantum dot (QD) allows for all electrical manipulation of the hole spin qubit. Motivated by this fact, we analyze different fabrication-dependent properties of nanowires, such as orientation, cross section, and the presence of strain, with the goal being to find the material and geometry that enables the fastest qubit manipulation, whose speed can be identified using the Rabi frequency. We show that QD in nanowires with a circular cross section (cNWs) enables much weaker driving of the hole spin qubit than QDs embedded in square profile nanowires (sNWs). Assuming the orientation of the Si nanowire that maximizes the spin-orbit effects, our calculations predict that the Rabi frequencies of the hole spin qubits inside Ge and Si sNW QD have comparable strengths for weak electric fields. The global maximum of the Rabi frequency is found in Si sNW QD for strong electric fields, putting this setup ahead of others in creating the hole spin qubit. Finally, we demonstrate that strain in the Si/Ge core/shell nanowire QD decreases the Rabi frequency. In cNW QD, this effect is weak; in sNW QD, it is possible to optimize the impact of strain with the appropriate tuning of the electric field strength.

arXiv comment11 pages, 7 figures

References in corpus (39)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Coherent control of a single electron spin with electric fields
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A Two Qubit Logic Gate in Silicon
• Electron spin coherence exceeding seconds in high purity silicon
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Phonon-induced decay of the electron spin in quantum dots
• Electric Dipole Induced Spin Resonance in Quantum Dots
• Spectroscopy of spin-orbit quantum bits in indium antimonide nanowires
• Ge hole spin qubit
• Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits
• Strong Spin-Orbit Interaction and Helical Hole States in Ge/Si Nanowires
• Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch
• Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
• Theory of phonon-induced spin relaxation in laterally coupled quantum dots
• Strong and Tunable Spin-Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires
• Monolithic growth of ultra-thin Ge nanowires on Si(001)
• Electrical control of g-factors in a few-hole silicon nanowire MOSFET
• Hole Spin Coherence in a Ge/Si Heterostructure Nanowire
• Heavy hole states in Germanium hut wires
• Squeezed hole spin qubits in Ge quantum dots with ultrafast gates at low power
• Strong spin-orbit interaction and $g$-factor renormalization of hole spins in Ge/Si nanowire quantum dots
• Spin dynamics in a strongly driven system: very slow Rabi oscillations
• Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
• Tunable g factor and phonon-mediated hole spin relaxation in Ge/Si nanowire quantum dots
• Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices
• Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots
• Antilocalization of Coulomb Blockade in a Ge-Si Nanowire
• Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift
• Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
• Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation
• Single, double, and triple quantum dots in Ge/Si nanowires
• Acoustic phonons and strain in core/shell nanowires
• Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits
• Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator
• Spin rotation by resonant electric field in few-level quantum dots: Floquet dynamics and tunneling
• Electrical control of a spin qubit in InSb nanowire quantum dots: strongly suppressed spin relaxation in high magnetic field
• Control of a spin qubit in a lateral GaAs quantum dot based on symmetry of gating potential
• Electric dipole spin resonance at shallow donors in quantum wires

Cited by in corpus (13)

• Hole Spin Qubits in Ge Nanowire Quantum Dots: Interplay of Orbital Magnetic Field, Strain, and Growth Direction
• Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit
• Enhanced orbital magnetic field effects in Ge hole nanowires
• Majorana zero modes in gate-defined germanium hole nanowires
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Germanium-based hybrid semiconductor-superconductor topological quantum computing platforms: Disorder effects
• Proximity-enabled control of spin-orbit coupling in phosphorene symmetrically and asymmetrically encapsulated by WSe${}_2$ monolayers
• Two-band description of the strong `spin'-orbit coupled one-dimensional hole gas in a cylindrical Ge nanowire
• Electrical manipulation of a hole `spin'-orbit qubit in nanowire quantum dot: the nontrivial magnetic field effects
• Cancelling second order frequency shifts in Ge hole spin qubits via bichromatic control
• Hole subband dispersions and strong `spin'-orbit coupling in a cylindrical Ge nanowire
• Spin-photon interaction in a nanowire quantum dot with asymmetrical confining potential
• Giant Rabi frequencies between qubit and excited hole states in silicon quantum dots