Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift

Abstract

Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of Si/SiGe spin qubits can be limited by the microwave-induced frequency shift of electric dipole spin resonance and it can be improved by optimization of control pulses. As we increase the control microwave amplitude, we observe a shift of the qubit resonance frequency, in addition to the increasing Rabi frequency. We reveal that this limits control fidelity with a conventional amplitude-modulated microwave pulse below 99.8%. In order to achieve a gate fidelity > 99.9%, we introduce a quadrature control method, and validate this approach experimentally by randomized benchmarking. Our finding facilitates realization of an ultra-high fidelity qubit with electron spins in quantum dots.

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Cited by in corpus (33)

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• Site-selective quantum control in an isotopically enriched 28Si/SiGe quadruple quantum dot
• Assessment of error variation in high-fidelity two-qubit gates in silicon
• Universal control of four singlet-triplet qubits
• Spatial noise correlations beyond nearest-neighbor in ${}^{28}$Si/SiGe spin qubits
• Coherence of a driven electron spin qubit actively decoupled from quasi-static noise
• Hotter is easier: unexpected temperature dependence of spin qubit frequencies
• Nonlinear response and crosstalk of electrically driven silicon spin qubits
• Radio frequency reflectometry in silicon-based quantum dots
• Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences
• Bichromatic Rabi Control of Semiconductor Qubits
• Electrical control of the hole spin qubit in Si and Ge nanowire quantum dots
• Magnetic gradient free two axis control of a valley spin qubit in SiGe
• Single spin qubit geometric gate in a silicon quantum dot
• Bridging the reality gap in quantum devices with physics-aware machine learning
• Electrical control of a spin qubit in InSb nanowire quantum dots: strongly suppressed spin relaxation in high magnetic field
• Indications of a soft cutoff frequency in the charge noise of a Si/SiGe quantum dot spin qubit
• Control of a spin qubit in a lateral GaAs quantum dot based on symmetry of gating potential
• Anisotropy with respect to the applied magnetic field of spin qubit decoherence times
• Probing two-qubit capacitive interactions beyond bilinear regime using dual Hamiltonian parameter estimations
• Real-time milli-Kelvin thermometry in a semiconductor qubit architecture
• Suppressing spurious transitions using spectrally balanced pulse
• Correcting on-chip distortion of control pulses with silicon spin qubits
• Singlet-only Always-on Gapless Exchange Qubits with Baseband Control
• Charge state estimation in quantum dots using a Bayesian approach
• Multi-time quantum process tomography on a superconducting qubit
• Cancelling second order frequency shifts in Ge hole spin qubits via bichromatic control
• Measuring pulse heating in Si quantum dots with individual two-level fluctuators
• Phonon-induced frequency shift in semiconductor spin qubits