Radio frequency reflectometry in silicon-based quantum dots

Abstract

RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 $\mu$s.

arXiv comment6 pages, 4 figures

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Cited by in corpus (6)

• Universal control of a six-qubit quantum processor in silicon
• Probing quantum devices with radio-frequency reflectometry
• Colloquium: Advances in automation of quantum dot devices control
• Scalable on-chip multiplexing of silicon single and double quantum dots
• Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier
• 4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot