Rapid high-fidelity spin state readout in Si/SiGe quantum dots via radio-frequency reflectometry

Abstract

Silicon spin qubits show great promise as a scalable qubit platform for fault-tolerant quantum computing. However, fast high-fidelity readout of charge and spin states, which is required for quantum error correction, has remained elusive. Radio-frequency reflectometry enables rapid high-fidelity readout of GaAs spin qubits, but the relatively large resistances and capacitances of accumulation-mode Si quantum dot devices have made radio-frequency reflectometry challenging in these platforms. In this work, we implement radio-frequency reflectometry in a Si/SiGe quantum dot device with overlapping gates by making minor device-level changes that eliminate these challenges. We demonstrate charge state readout with a fidelity above 99.9% in an integration time of 300 ns. We measure the singlet and triplet states of a double quantum dot via both conventional Pauli spin blockade and a charge latching mechanism, and we achieve maximum fidelities of 82.9% and 99.0% in 2.08 $\mu$s and 1.6 $\mu$s integration times, respectively. We also use radio-frequency reflectometry to perform single-shot readout of single-spin states via spin-selective tunneling in microsecond-scale integration times.

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Cited by in corpus (48)

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• Conditional Teleportation of Quantum-Dot Spin States
• Looped Pipelines Enabling Effective 3D Qubit Lattices in a Strictly 2D Device
• Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier
• Characterization of individual charge fluctuators in Si/SiGe quantum dots
• Feedback-based active reset of a spin qubit in silicon
• Generalized figure of merit for qubit readout
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• Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots
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• Continuous microwave photon counting by semiconductor-superconductor hybrids
• Quantum Dot Source-Drain Transport Response at Microwave Frequencies
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• Intrinsic Noise of the Single Electron Box
• 4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot
• Using near-flat-band electrons for read-out of molecular spin qubit entangled states
• Four-state discrimination for a pair of spin qubits via gate reflectometry
• Measuring and correcting nanosecond pulse distortions in quantum-dot spin qubits
• Fast high-fidelity baseband reset of a latched state for quantum dot qubit readout