High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon
arXiv:1807.10285 · doi:10.1103/PhysRevLett.119.046802
Abstract
In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.40.2%. We measure the triplet-minus relaxation time to be of the order 3s at 2.5T and observe its predicted decrease as a function of magnetic field, reaching 0.5s at 1T.
arXiv comment8 pages, 4 figures - DEV053 - Team Viper
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- Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits
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- A silicon singlet-triplet qubit driven by spin-valley coupling
- Readout Of Singlet-Triplet Qubits At Large Magnetic Field Gradients
- Single-shot readout of a driven hybrid qubit in a GaAs double quantum dot
- Robust energy selective tunneling readout of singlet triplet qubits under large magnetic field gradient
- Generalized figure of merit for qubit readout
- Zero field optical magnetic resonance study of phosphorus donors in 28-silicon
- Acceptor-based qubit in silicon with tunable strain
- Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues
- Low Temperature Relaxation of Donor Bound Electron Spins in Si:P
- Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot
- Silicon Donor Array as a Disordered One-Dimensional Electron Gas
- Certification of spin-based quantum simulators