Quantum control and process tomography of a semiconductor quantum dot hybrid qubit

Abstract

The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. While quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Further, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins, or the addition of a third quantum dot. Here we demonstrate a new qubit that offers both simplicity - it requires no special preparation and lives in a double quantum dot with no added complexity - and is very fast: we demonstrate full control on the Bloch sphere with $\pi$-rotation times less than 100 ps in two orthogonal directions. We report full process tomography, extracting high fidelities equal to or greater than 85% for X-rotations and 94% for Z-rotations. We discuss a path forward to fidelities better than the threshold for quantum error correction.

6 pages, excluding Appendix

References in corpus (9)

• Single-shot read-out of an individual electron spin in a quantum dot
• Driven coherent oscillations of a single electron spin in a quantum dot
• Electrically driven single electron spin resonance in a slanting Zeeman field
• Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization
• Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit
• Randomized benchmarking and process tomography for gate errors in a solid-state qubit
• Coherent spin manipulation in an exchange-only qubit
• Coherent Adiabatic Spin Control in the Presence of Charge Noise Using Tailored Pulses
• Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

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